Method and apparatus for preparing integrated circuit thin films by chemical vapor deposition
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United States of America Patent
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Aug 29, 2000
Issued Date -
N/A
app pub date -
Jul 14, 1997
filing date -
Feb 25, 1991
priority date (Note) -
Expired
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Abstract
A mist is generated by a venturi from liquid precursors containing compounds used in chemical vapor deposition, transported in carrier gas through tubing at ambient temperature, passed into a heated zone where the mist droplets are gasified at a temperature of between 100.degree. C. and 200.degree. C., which is lower than the decomposition temperature of the precursor compounds. The gasified liquid is injected through an inlet assembly into a deposition reactor in which there is a substrate heated to from 400.degree. C. to 600.degree. C., on which the gasified compounds decompose and form a thin film of layered superlattice compound.
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