Method for preparing polysilane pattern-bearing substrate

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United States of America Patent

PATENT NO 6110651
SERIAL NO

09208588

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Abstract

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A polysilane pattern-bearing substrate is prepared by the steps of (1) forming a polysilane film on a substrate, (2) subjecting the polysilane film to selective light exposure in the presence of a first solvent which does not dissolve polysilane, but dissolves siloxane, for converting the polysilane in selected areas to siloxane for thereby forming a pattern, (3) removing only the siloxane from the substrate of step (2) using a second solvent which does not dissolve polysilane, but dissolves siloxane, and (4) completely removing the second solvent. The polysilane pattern has a high degree of definition.

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Patent Owner(s)

Patent OwnerAddress
SHIN-ETSU CHEMICAL CO LTD4-1 MARUNOUCHI 1-CHOME CHIYODA-KU TOKYO 1000005 ?1000005

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Fukushima, Motoo Usui-gun, JP 48 601
Mori, Shigeru Usui-gun, JP 187 2876

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