Method for forming a notched gate oxide asymmetric MOS device
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United States of America Patent
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Aug 29, 2000
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N/A
app pub date -
Jun 27, 1997
filing date -
Jun 27, 1997
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Abstract
A method for making an asymmetric MOS device having a notched gate oxide wherein a region of the gate oxide adjacent to either the source or drain is thinner than the remainder of the gate oxide. The resulting MOS device includes a channel under the notched region of the gate oxide with a relatively high concentration of mobile charge carriers.
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