In-situ capped aluminum plug (CAP) process using selective CVD AL for integrated plug/interconnect metallization
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Aug 29, 2000
Grant Date -
N/A
app pub date -
Dec 30, 1996
filing date -
Dec 30, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
The present invention generally provides a method of forming a structure having a selective CVD metal plug with a continuous barrier layer formed thereon. More particularly, the present invention applies a thin layer of warm PVD metal over a selective CVD metal plug and adjacent nodules on the dielectric field to planarize the metal surface. A barrier is then deposited over the planarized metal surface. Therefore, the invention provides the advantages of having (1) void-free, sub-half micron selective CVD metal via plugs and interconnects, and (2) a reduced number of process steps without the use of CMP, and (3) barrier layers over the metal plugs to improve the electromigration resistance of the metal.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully