Lewis base adducts of anhydrous mononuclear tris(.beta.-diketonate) bismuth compositions for deposition of bismuth-containing films, and method of making the same
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United States of America Patent
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Aug 29, 2000
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app pub date -
Dec 31, 1998
filing date -
Oct 30, 1997
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Abstract
Anhydrous mononuclear Lewis base adducted tris(.beta.-diketonato) bismuth complexes, useful as precursors for chemical vapor deposition of bismuth, for producing Bi-containing films of significantly improved stoichiometry, morphology and functional character, as compared to films obtained from dinuclear tris(.beta.-diketonato) bismuth complexes of the prior art.
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