Small pores defined by a disposable internal spacer for use in chalcogenide memories
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United States of America Patent
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Aug 29, 2000
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N/A
app pub date -
Nov 13, 1997
filing date -
Jul 22, 1996
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Abstract
A method for fabricating an ultra-small pore or contact for use in chalcogenide memory cells specifically and in semiconductor devices generally in which disposable spacers are utilized to fabricate ultra-small pores or contacts. The pores thus defined have minimum lateral dimensions ranging from approximately 500 to 4000 Angstroms. The pores thus defined may then be used to fabricate a chalcogenide memory cell or other semiconductor devices.
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