Process for producing a silicon single crystal, and heater for carrying out the process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Sep 12, 2000
Grant Date -
N/A
app pub date -
Nov 25, 1997
filing date -
Dec 17, 1996
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A process for producing a silicon single crystal by the Czochralski method, utilizes a heater which is intended for heating a silicon-filled crucible and is arranged below the crucible. The process has energy delivered to the melt at least some of the time inductively using a coiled heater arranged under the crucible. The heater is in the form of a wound coil.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully