Method for constructing ferroelectric based capacitor for use in memory systems
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United States of America Patent
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Sep 12, 2000
Grant Date -
N/A
app pub date -
May 8, 1998
filing date -
Mar 17, 1995
priority date (Note) -
Expired
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Abstract
A ferroelectric based capacitor structure and method for making the same. The capacitor includes a bottom electrode having a layer of Pt in contact with a first layer of an ohmic material. The capacitor dielectric is constructed from a layer of lead zirconium titanate doped with an element having an oxidation state greater than +4. The top electrode of the capacitor is constructed from a second layer of ohmic material in contact with a layer of Pt. The preferred ohmic material is LSCO; although RuO.sub.2 may also be utilized. The capacitor is preferably constructed over the drain of a FET such that the bottom electrode of the capacitor is connected to the drain of the FET. The resulting capacitor structure has both low imprint and low fatigue.
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