Mask pattern for alignment
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United States of America Patent
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-
Sep 12, 2000
Grant Date -
N/A
app pub date -
Aug 28, 1997
filing date -
Aug 29, 1996
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A reticle mask is provided which allows a determination of an offset amount of a circuit pattern on a mask with respect to reticle alignment marks based on the offset between the reticle alignment marks and position measurement patterns. The position measurement patterns are formed in the circuit pattern area surrounded by a light shielding area, and enables a determination of the offset amount of the circuit pattern with respect to the reticle alignment marks, thereby reducing an offset amount between overlaid circuit patterns.
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