Semiconductor memory device using MONOS type nonvolatile memory cell
Number of patents in Portfolio can not be more than 2000
United States of America Patent
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-
Sep 12, 2000
Grant Date -
N/A
app pub date -
Jul 13, 1999
filing date -
Jul 14, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
That surface portion of a semiconductor substrate which is adjacent to a buried source region formed in the substrate is covered with an offset side wall to suppress expansion of a channel beneath the offset side wall. In addition, buried source regions in the form of offset side walls are formed on the two sides of a drain region having one non-offset side wall to prevent a write or read error in unselected memory cell transistors on both sides of a selected memory transistor either in a data write or in a data read.
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