US Patent No: 6,120,571

Number of patents in Portfolio can not be more than 2000

Polishing agent for semiconductor and method for its production

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Importance

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Abstract

A polishing agent for semiconductor, comprising cerium oxide particles having a weight average particle size of from 0.1 to 0.35 .mu.m and a crystallite size of from 150 to 600 .ANG..

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SEIMI CHEMICAL CO., LTD.TOKYO45
SEIMI CHEMICAL CO.CHIGASAKI-CITY KANAGAWA, JP1

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Aihara, Ryohei Chigasaki, JP 1 33
Endoh, Kazuaki Chigasaki, JP 4 33
Tsugita, Katsuyuki Kanagawa, JP 9 38

Cited Art

Patent Info (Count) # Cites Year
 
KABUSHIKI KAISHA TOSHIBA (1)
5,597,341 Semiconductor planarizing apparatus 28 1995
 
MITSUI MINING & SMELTING CO., LTD. (1)
5,766,279 Polishing agent, method for producing the same and method for polishing 18 1996
 
NEC CORPORATION (1)
5,468,682 Method of manufacturing semiconductor device using the abrasive 25 1994
 
NISSAN CHEMICAL INDUSTRIES, LTD. (1)
5,543,126 Process for preparing crystalline ceric oxide 28 1995
 
RHONE-POULENC CHIMIE (1)
5,011,671 Ceric oxide with new morphological characteristics and method for obtaining same 15 1988
 
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (1)
5,389,352 Oxide particles and method for producing them 50 1993
 
SUMITOMO CHEMICAL COMPANY, LIMITED (1)
5,697,992 Abrasive particle, method for producing the same, and method of use of the same 35 1996

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
HITACHI CHEMICAL COMPANY, LTD. (10)
6,343,976 Abrasive, method of polishing wafer, and method of producing semiconductor device 19 2000
6,863,700 Cerium oxide abrasive and method of polishing substrates 12 2001
7,115,021 Abrasive, method of polishing target member and process for producing semiconductor device 2 2002
7,708,788 Cerium oxide abrasive and method of polishing substrates 0 2004
7,867,303 Cerium oxide abrasive and method of polishing substrates 0 2006
7,871,308 Abrasive, method of polishing target member and process for producing semiconductor device 0 2006
8,162,725 Abrasive, method of polishing target member and process for producing semiconductor device 0 2007
7,963,825 Abrasive, method of polishing target member and process for producing semiconductor device 0 2008
8,323,604 Cerium salt, producing method thereof, cerium oxide and cerium based polishing slurry 0 2010
8,137,159 Abrasive, method of polishing target member and process for producing semiconductor device 0 2011
 
FERRO CORPORATION (3)
6,596,042 Method of forming particles for use in chemical-mechanical polishing slurries and the particles formed by the process 6 2001
6,818,030 Process for producing abrasive particles and abrasive particles produced by the process 4 2002
7,666,239 Hydrothermal synthesis of cerium-titanium oxide for use in CMP 0 2005
 
MOSAID TECHNOLOGIES INCORPORATED (3)
6,409,936 Composition and method of formation and use therefor in chemical-mechanical polishing 10 1999
6,544,435 Composition and method of formation and use therefor in chemical-mechanical polishing 0 2002
6,630,403 Reduction of surface roughness during chemical mechanical planarization (CMP) 8 2002
 
LG CHEM, LTD. (2)
8,029,754 Cerium oxide powder and process for producing the same 0 2005
8,329,123 Method for preparing of cerium oxide powder for chemical mechanical polishing and method for preparing of chemical mechanical polishing slurry using the same 0 2010
 
SAINT-GOBAIN CERAMICS & PLASTICS, INC. (2)
7,993,420 Ceria material and method of forming same 0 2009
8,216,328 Ceria material and method of forming same 0 2011
 
ATOFINA (1)
6,261,632 Process for improving the adhesion of metal particles to a carbon substrate 1 1999
 
HITACHI, LTD. (1)
6,514,864 Fabrication method for semiconductor integrated circuit device 2 2001
 
KAO CORPORATION (1)
6,551,175 Polishing composition 8 2001
 
LUCENT TECHNOLOGIES INC. (1)
6,183,652 Method for removing microorganism contamination from a polishing slurry 3 1999
 
MITSUI MINING & SMELTING CO., LTD. (1)
6,689,178 Cerium based abrasive material and method for producing cerium based abrasive material 5 2002
 
NISSAN CHEMICAL INDUSTRIES, LTD. (1)
7,578,862 Abrasive compound for glass hard disk platter 0 2003
 
QIMONDA AG (1)
6,358,850 Slurry-less chemical-mechanical polishing of oxide materials 3 1999
 
RENESAS TECHNOLOGY CORP. (1)
6,979,650 Fabrication method of semiconductor integrated circuit device 1 2004
 
ROHM AND HAAS ELECTRONIC MATERIALS CMP HOLDINGS, INC. (1)
6,616,717 Composition and method for polishing in metal CMP 9 2001
 
SAMSUNG CORNING PRECISION MATERIALS CO., LTD. (1)
7,090,821 Metal oxide powder for high precision polishing and method of preparation thereof 0 2003
 
SAMSUNG ELECTRONICS CO., LTD. (1)
7,429,367 Method for producing improved cerium oxide abrasive particles and compositions including such particles 0 2005
 
SEIMI CHEMICAL CO., LTD. (1)
6,428,392 Abrasive 3 2000
 
UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC. (1)
6,866,793 High selectivity and high planarity dielectric polishing 6 2002