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Abstract

A method for forming a semiconductor device includes providing a semiconductor body having source and drain regions therein and a gate electrode on a portion of a surface of such body between the source and drain regions. A dielectric layer is provided on the surface of the semiconductor body over the source and drain regions. A dielectric material is formed over the dielectric layer and over the gate electrode. An inorganic, dielectric layer is formed over the semiconductor body dielectric material. The inorganic, dielectric layer is patterned into a mask to expose selected portions of the dielectric material, such portions being over the source and drain regions. An etch is brought into contact with the mask. The etch removes the exposed underlying portions of the dielectric material and exposed underling portions of the dielectric layer to thereby expose the portions of the source and drain regions.

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First Claim