Method of contact structure formation
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United States of America Patent
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Sep 19, 2000
Grant Date -
N/A
app pub date -
Jan 15, 1997
filing date -
Jan 15, 1997
priority date (Note) -
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Abstract
A method of forming a semiconductor structure having features of differing sizes, includes forming a first layer on a semiconductor substrate; patterning only a first plurality of features of a first feature size on the first layer; removing portions of the first layer, the portions corresponding to the first plurality of features, filling the first plurality of openings; forming a second layer, the second layer overlying the first layer and the filled openings; patterning a second plurality of features of a second feature size on the second layer; removing portions of the first layer and second layer, the portions corresponding to the second plurality of features, the second plurality of openings extending through the first and second layers, and filling the second plurality openings.
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