A method of forming a semiconductor structure having features of differing sizes, includes forming a first layer on a semiconductor substrate; patterning only a first plurality of features of a first feature size on the first layer; removing portions of the first layer, the portions corresponding to the first plurality of features, filling the first plurality of openings; forming a second layer, the second layer overlying the first layer and the filled openings; patterning a second plurality of features of a second feature size on the second layer; removing portions of the first layer and second layer, the portions corresponding to the second plurality of features, the second plurality of openings extending through the first and second layers, and filling the second plurality openings.
* 6333254 Methods of forming a local interconnect method of fabricating integrated circuitry comprising an SRAM cell having a local interconnect and having circuitry peripheral to the SRAM cell and method of forming contact plugs
6380596 METHOD OF FORMING A LOCAL INTERCONNECT, METHOD OF FABRICATING INTEGRATED CIRCUITRY COMPRISING AN SRAM CELL HAVING A LOCAL INTERCONNECT AND HAVING CIRCUITRY PERIPHERAL TO THE SRAM CELL, AND METHOD OF FORMING CONTACT PLUGS
* 7169662 Methods for making semiconductor structures having high-speed areas and high-density areas
7095083 Methods for making semiconductor structures having high-speed areas and high-density areas
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