Discharge electrode and process chamber of dry etching facility for manufacturing semiconductor devices
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United States of America Patent
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Sep 26, 2000
Grant Date -
N/A
app pub date -
Sep 22, 1999
filing date -
Oct 1, 1998
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Abstract
A process chamber of a dry etching facility for manufacturing semiconductor devices uniformly forms the ion density of plasma over a wafer, and reduces the volume of the process chamber by installing a plurality of discharge openings in an electrode housing which supports the electrode plate of a lower electrode. The lower electrode is a discharge electrode which is constructed such that a plurality of discharge openings are symmetrically provided in the side wall of the electrode housing supporting the electrode plate on which a wafer is mounted, and the discharge openings form a discharge passage which is connected to a discharge pipe at a pipe connection opening.
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