Semiconductor memory device with redundancy circuit having a reference resistance
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United States of America Patent
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Sep 26, 2000
Grant Date -
N/A
app pub date -
Oct 19, 1999
filing date -
Nov 5, 1998
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
A semiconductor memory device with a redundancy circuit includes a reference section, a fuse section and a latch section. The reference section includes a reference resistance and supplies a first current to the reference resistance. The fuse section includes a fuse and supplies a second current to the fuse. The second current is proportional to the first current. The latch section has a threshold and latches a fuse state data based on the threshold and a voltage drop across the fuse. The fuse state data indicates whether or not the fuse is cut.
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