Soft passivation layer in semiconductor fabrication
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United States of America Patent
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Oct 3, 2000
Grant Date -
N/A
app pub date -
Sep 30, 1997
filing date -
Sep 30, 1997
priority date (Note) -
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Abstract
The use of an etch stop layer to define a terminal via opening to access a device feature after formation of a photosensitive soft-passivation layer. The etch stop layer allows the size of the terminal via opening to be decoupled from the resolution capabilities of current photosensitive soft-passivation layer.
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