In-situ pre-metallization clean and metallization of semiconductor wafers
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Oct 17, 2000
Grant Date -
N/A
app pub date -
Nov 17, 1997
filing date -
Nov 17, 1997
priority date (Note) -
In Force
status (Latency Note)
A preliminary load of PAIR data current through [] has been loaded. Any more recent PAIR data will be loaded within twenty-four hours. |
PAIR data current through []
A preliminary load of cached data will be loaded soon.
Any more recent PAIR data will be loaded within twenty-four hours.
Next PAIR Update Scheduled on [ ] |
Importance
US Family Size
|
Non-US Coverage
|
Patent Longevity
|
Forward Citations
|
Abstract
A method is provided of cleaning device surfaces for the metallization thereof by treating the surfaces in a chamber equipped for ionized physical vapor deposition or other plasma-based metal deposition process. The surfaces are plasma etched, preferably in a chamber in which the next metal layer is to be deposited onto the surfaces. Also or in the alternative, the surfaces are plasma etched with a plasma containing ions of the metal to be deposited. Preferably also, the etching process is followed by depositing a film of the metal, preferably by ionized physical vapor deposition, in the chamber. The metal may, for example, be titanium that is sputtered from a target within the chamber. The process of depositing the metal, where the metal is titanium, may, for example, be followed by the deposition of a titanium nitride layer. The process steps may be used to passivate the surfaces for transfer of the substrate containing the device surfaces through an oxygen or water vapor containing atmosphere or through another atmosphere containing potential contaminants such as through the transfer chamber of a cluster tool to which are connected CVD or other chemical processing modules. In the preferred embodiment, etching is achieved by maintaining a high ion fraction and high bombardment energy, for example, by applying a high negative bias to the substrate, operating the plasma in a net etching mode, then, by lowering the bombardment energy, for example by lowering the bias voltage, or by lowering the ion fraction, such as by increasing sputtering power, or decreasing plasma power, chamber pressure, a net deposition of the metal by IPVD is brought about.
First Claim
Family
- 15 United States
- 10 France
- 8 Japan
- 7 China
- 5 Korea
- 2 Other
Patent Owner(s)
- TOKYO ELECTRON LIMITED
International Classification(s)
Inventor(s)
Inventor Name | Address | # of filed Patents | Total Citations |
---|---|---|---|
Licata, Thomas J | Mesa, AZ | 15 | 478 |
Cited Art Landscape
- No Cited Art to Display
Patent Citation Ranking
Forward Cite Landscape
- No Forward Cites to Display
Maintenance Fees
Fee | Large entity fee | small entity fee | micro entity fee | due date |
---|
Fee | Large entity fee | small entity fee | micro entity fee |
---|---|---|---|
Surcharge after expiration - Late payment is unavoidable | $700.00 | $350.00 | $175.00 |
Surcharge after expiration - Late payment is unintentional | $1,640.00 | $820.00 | $410.00 |
Full Text
Legal Events
Matter Detail
Update Public Data Dismiss Edit SaveRenewals Detail
Edit SaveNote
The template below is formatted to ensure compatibility with our system.
Provide tags with | separated like (tags1|tags2).
Maximum length is 128 characters for Customer Application No
Mandatory Fields * - 'MatterType','AppType','Country','Title','SerialNo'.
Acceptable Date Format - 'MM/DD/YYYY'.
Acceptable Filing/App Types -
- Continuation/Divisional
- Original
- Paris Convention
- PCT National
- With Priority
- EP Validation
- Provisional Conversion
- Reissue
- Provisional
- Foreign Extension
Acceptable Status -
- Pending
- Abandoned
- Unfiled
- Expired
- Granted
Acceptable Matter Types -
- Patent
- Utility Model
- Supplemental Protection Certificate
- Design
- Inventor Certificate
- Plant
- Statutory Invention Reg
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Success
E-mail has been sent successfully.
Failure
Some error occured while sending email. Please check e-mail and try again!
PAIR load has been initiated
A preliminary load of cached data will be loaded soon. Current PAIR data will be loaded within twenty four hours.
File History PDF
Thank you for your purchase! The File Wrapper for Patent Number 6132564 will be available within the next 24 hours.
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully
Important Notes on Latency of Status data
Please note there is up to 60 days of latency in this Status indicator for certain status conditions. You can obtain up-to-date Status indicator readings by ordering PAIR for the file.
An application with the status "Published" (which means it is pending) may be recently abandoned, but not yet updated to reflect its abandoned status. However, an application filed less than one year ago is unlikely to be abandoned.
A patent with the status "Granted" may be recently expired, but not yet updated to reflect its expired status. However, it is highly unlikely a patent less than 3.5 years old would be expired.
An application with the status "Abandoned" is almost always current, but there is a small chance it was recently revived and the status not yet updated.
Important Note on Priority Date data
This priority date is an estimated earliest priority date and is purely an estimation. This date should not be taken as legal conclusion. No representations are made as to the accuracy of the date listed. Please consult a legal professional before relying on this date.
We are sorry but your current selection exceeds the maximum number of portfolios (0) for this membership level. Upgrade to our Level for up to -1 portfolios!.