Tempsense FET with implanted line of diodes (EPS)
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United States of America Patent
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Oct 17, 2000
Grant Date -
N/A
app pub date -
Oct 2, 1998
filing date -
Oct 2, 1998
priority date (Note) -
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status (Latency Note)
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Abstract
A MOSgated device has a plurality of spaced polysilicon diodes on top of a thin insulation layer atop a MOSgated device die. A constant forward current through the diodes produces a voltage drop which is related to the die temperature. The anode and cathode ends of the diode string are connected to the metal pads on the die surface. A first capacitor connects the calkode terminal of the string to the MOSgated device drain electrode and a second capacitor is connected across the anode and cathode ends of the diode string. Both the anode and cathode are unaffected by noise at the drain electrode. The diode string is located within a narrow strip along the die center and is separated from the MOSFET active area by a very narrow termination region which excludes a metal bus.
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