Semiconductor memory device and method for fabricating the same
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United States of America Patent
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Oct 24, 2000
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N/A
app pub date -
May 5, 1998
filing date -
Dec 26, 1997
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Abstract
A semiconductor memory device and method of fabricating the same, which improves adhesion of the lower electrode of a ferroelectric planar capacitor, and prevents inter-diffusion between the Pt electrode of the capacitor and adhesion layer placed under the Pt electrode. The semiconductor memory device includes an insulating layer formed on a substrate, a paraelectric layer formed on the insulating layer, and a conductive layer formed on the paraelectric layer.
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