US Patent No: 6,139,700

Number of patents in Portfolio can not be more than 2000

Method of and apparatus for forming a metal interconnection in the contact hole of a semiconductor device

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ATTORNEY / AGENT: (SPONSORED)
 

Importance

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Abstract

A method and an apparatus of fabricating a metal interconnection in a contact hole of a semiconductor device reduces contact resistance and improves step coverage. A contact hole is opened in an interlayer insulating film formed on a semiconductor substrate. A conductive layer used as an ohmic contact layer is formed on the interlayer insulating film including the contact hole. An upper surface of the conductive layer is nitrided to form a protective layer. An ALD (atomic layer deposition)-metal barrier layer is formed on the protective layer. The resulting metal barrier layer has good step coverage and no impurities, and the protective layer prevents defects in the conductive layer caused by precursor impurities used during the formation of the metal barrier layer.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO45752

International Classification(s)

Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kang, Sang-Bom Seoul, KR 77 1927
Lee, Sang-in Anyang-si, KR 64 3111

Cited Art

Patent Info (Count) # Cites Year
 
SAMSUNG ELECTRONICS CO., LTD. (2)
5,998,870 Wiring structure of semiconductor device and method for manufacturing the same 16 1997
5,873,942 Apparatus and method for low pressure chemical vapor deposition using multiple chambers and vacuum pumps 24 1997
 
ANELVA CORPORATION (1)
5,288,379 Multi-chamber integrated process system 70 1992
 
APPLIED MATERIALS, INC. (1)
5,858,184 Process for forming improved titanium-containing barrier layers 18 1995
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (1)
5,911,857 Method for forming metal wiring of semiconductor devices 9 1997
 
IXYS CH GMBH (1)
5,338,423 Method of eliminating metal voiding in a titanium nitride/aluminum processing 12 1992
 
KAWASAKI MICROELECTRONICS, INC. (1)
5,973,402 Metal interconnection and method for making 30 1997
 
MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD. (1)
5,780,908 Semiconductor apparatus with tungstein nitride 30 1996

Patent Citation Ranking

Forward Cites

Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (146)
6,620,723 Formation of boride barrier layers using chemisorption techniques 113 2000
6,551,929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 191 2000
6,855,368 Method and system for controlling the presence of fluorine in refractory metal layers 30 2000
7,101,795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 24 2000
6,951,804 Formation of a tantalum-nitride layer 52 2001
6,660,126 Lid assembly for a processing system to facilitate sequential deposition techniques 92 2001
6,734,020 Valve control system for atomic layer deposition chamber 71 2001
6,849,545 System and method to form a composite film stack utilizing sequential deposition techniques 24 2001
7,085,616 Atomic layer deposition apparatus 16 2001
6,718,126 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 96 2001
6,936,906 Integration of barrier layer and seed layer 32 2001
6,638,810 Tantalum nitride CVD deposition by tantalum oxide densification 48 2001
6,878,206 Lid assembly for a processing system to facilitate sequential deposition techniques 28 2001
6,729,824 Dual robot processing system 18 2001
6,765,178 Chamber for uniform substrate heating 14 2001
6,916,398 Gas delivery apparatus and method for atomic layer deposition 87 2001
6,811,814 Method for growing thin films by catalytic enhancement 12 2002
6,827,978 Deposition of tungsten films 33 2002
6,833,161 Cyclical deposition of tungsten nitride for metal oxide gate electrode 43 2002
7,439,191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications 0 2002
6,911,391 Integration of titanium and titanium nitride layers 29 2002
6,846,516 Multiple precursor cyclical deposition system 70 2002
6,720,027 Cyclical deposition of a variable content titanium silicon nitride layer 49 2002
6,875,271 Simultaneous cyclical deposition in different processing regions 46 2002
6,869,838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications 8 2002
6,932,871 Multi-station deposition apparatus and method 39 2002
6,838,125 Method of film deposition using activated precursor gases 72 2002
7,211,144 Pulsed nucleation deposition of tungsten layers 38 2002
6,936,538 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics 53 2002
6,998,014 Apparatus and method for plasma assisted deposition 58 2002
6,955,211 Method and apparatus for gas temperature control in a semiconductor processing system 44 2002
7,081,271 Cyclical deposition of refractory metal silicon nitride 30 2002
7,066,194 Valve design and configuration for fast delivery system 34 2002
6,772,072 Method and apparatus for monitoring solid precursor delivery 76 2002
6,915,592 Method and apparatus for generating gas to a processing chamber 53 2002
6,773,507 Apparatus and method for fast-cycle atomic layer deposition 77 2002
6,797,340 Method for depositing refractory metal layers employing sequential deposition techniques 46 2002
6,905,737 Method of delivering activated species for rapid cyclical deposition 28 2002
7,780,785 Gas delivery apparatus for atomic layer deposition 3 2002
6,939,804 Formation of composite tungsten films 39 2002
6,866,746 Clamshell and small volume chamber with fixed substrate support 59 2002
6,825,447 Apparatus and method for uniform substrate heating and contaminate collection 4 2002
6,809,026 Selective deposition of a barrier layer on a metal film 27 2002
7,175,713 Apparatus for cyclical deposition of thin films 35 2003
6,994,319 Membrane gas valve for pulsing a gas 15 2003
6,868,859 Rotary gas valve for pulsing a gas 50 2003
6,821,563 Gas distribution system for cyclical layer deposition 112 2003
6,972,267 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 31 2003
6,831,004 Formation of boride barrier layers using chemisorption techniques 48 2003
7,279,432 System and method for forming an integrated barrier layer 11 2003
7,041,335 Titanium tantalum nitride silicide layer 33 2003
6,958,296 CVD TiSiN barrier for copper integration 24 2003
7,204,886 Apparatus and method for hybrid chemical processing 35 2003
7,201,803 Valve control system for atomic layer deposition chamber 13 2003
6,998,579 Chamber for uniform substrate heating 2 2003
7,262,133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line 2 2003
7,244,683 Integration of ALD/CVD barriers with porous low k materials 4 2003
8,323,754 Stabilization of high-k dielectric materials 0 2004
8,119,210 Formation of a silicon oxynitride layer on a high-k dielectric material 1 2004
7,049,226 Integration of ALD tantalum nitride for copper metallization 40 2004
7,211,508 Atomic layer deposition of tantalum based barrier materials 46 2004
7,022,948 Chamber for uniform substrate heating 3 2004
7,033,922 Method and system for controlling the presence of fluorine in refractory metal layers 24 2004
7,905,959 Lid assembly for a processing system to facilitate sequential deposition techniques 1 2004
7,208,413 Formation of boride barrier layers using chemisorption techniques 43 2004
7,115,499 Cyclical deposition of tungsten nitride for metal oxide gate electrode 22 2004
7,429,402 Ruthenium as an underlayer for tungsten film deposition 18 2004
7,405,158 Methods for depositing tungsten layers employing atomic layer deposition techniques 9 2005
7,352,048 Integration of barrier layer and seed layer 3 2005
7,780,788 Gas delivery apparatus for atomic layer deposition 2 2005
7,094,680 Formation of a tantalum-nitride layer 44 2005
7,270,709 Method and apparatus of generating PDMAT precursor 25 2005
8,343,279 Apparatuses for atomic layer deposition 1 2005
7,238,552 Method and apparatus for depositing tungsten after surface treatment to improve film characteristics 13 2005
7,779,784 Apparatus and method for plasma assisted deposition 1 2005
7,294,208 Apparatus for providing gas to a processing chamber 13 2005
7,094,685 Integration of titanium and titanium nitride layers 20 2005
7,547,465 Multi-station deposition apparatus and method 0 2005
7,384,867 Formation of composite tungsten films 10 2005
7,402,534 Pretreatment processes within a batch ALD reactor 6 2005
7,514,358 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 1 2005
7,781,326 Formation of a tantalum-nitride layer 0 2005
7,464,917 Ampoule splash guard apparatus 6 2005
7,470,611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 3 2005
7,115,494 Method and system for controlling the presence of fluorine in refractory metal layers 23 2006
7,798,096 Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool 2 2006
7,228,873 Valve design and configuration for fast delivery system 29 2006
7,588,736 Apparatus and method for generating a chemical precursor 2 2006
7,547,952 Method for hafnium nitride deposition 5 2006
7,892,602 Cyclical deposition of refractory metal silicon nitride 1 2006
7,660,644 Atomic layer deposition apparatus 1 2006
7,871,470 Substrate support lift mechanism 1 2006
7,416,979 Deposition methods for barrier and tungsten materials 18 2006
7,235,486 Method for forming tungsten materials during vapor deposition processes 8 2006
8,318,266 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 0 2006
8,293,328 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 0 2006
7,682,984 Interferometer endpoint monitoring device 0 2006
7,429,516 Tungsten nitride atomic layer deposition processes 9 2006
7,422,637 Processing chamber configured for uniform gas flow 2 2006
7,775,508 Ampoule for liquid draw and vapor draw with a continuous level sensor 0 2006
7,850,779 Apparatus and process for plasma-enhanced atomic layer deposition 5 2006
7,682,946 Apparatus and process for plasma-enhanced atomic layer deposition 2 2006
7,678,194 Method for providing gas to a processing chamber 0 2006
7,429,361 Method and apparatus for providing precursor gas to a processing chamber 11 2006
7,695,563 Pulsed deposition process for tungsten nucleation 1 2007
7,402,210 Apparatus and method for hybrid chemical processing 20 2007
7,595,263 Atomic layer deposition of barrier materials 2 2007
8,110,489 Process for forming cobalt-containing materials 0 2007
7,501,344 Formation of boride barrier layers using chemisorption techniques 1 2007
7,501,343 Formation of boride barrier layers using chemisorption techniques 1 2007
7,494,908 Apparatus for integration of barrier layer and seed layer 2 2007
7,465,665 Method for depositing tungsten-containing layers by vapor deposition techniques 11 2007
7,465,666 Method for forming tungsten materials during vapor deposition processes 11 2007
7,749,815 Methods for depositing tungsten after surface treatment 0 2007
7,867,914 System and method for forming an integrated barrier layer 0 2007
7,597,758 Chemical precursor ampoule for vapor deposition processes 2 2007
7,521,379 Deposition and densification process for titanium nitride barrier layers 3 2007
8,282,992 Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 1 2007
7,794,544 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system 6 2007
8,158,526 Endpoint detection for photomask etching 0 2007
8,092,695 Endpoint detection for photomask etching 0 2007
7,964,505 Atomic layer deposition of tungsten materials 1 2008
7,605,083 Formation of composite tungsten films 1 2008
7,972,978 Pretreatment processes within a batch ALD reactor 0 2008
7,611,990 Deposition methods for barrier and tungsten materials 1 2008
7,591,907 Apparatus for hybrid chemical processing 7 2008
7,745,333 Methods for depositing tungsten layers employing atomic layer deposition techniques 0 2008
7,745,329 Tungsten nitride atomic layer deposition processes 0 2008
7,569,191 Method and apparatus for providing precursor gas to a processing chamber 4 2008
7,732,327 Vapor deposition of tungsten materials 0 2008
8,123,860 Apparatus for cyclical depositing of thin films 0 2008
8,146,896 Chemical precursor ampoule for vapor deposition processes 0 2008
7,699,295 Ampoule splash guard apparatus 0 2008
7,709,385 Method for depositing tungsten-containing layers by vapor deposition techniques 1 2008
7,674,715 Method for forming tungsten materials during vapor deposition processes 1 2008
7,670,945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 2 2008
7,732,325 Plasma-enhanced cyclic layer deposition process for barrier layers 2 2009
7,867,896 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 0 2009
7,838,441 Deposition and densification process for titanium nitride barrier layers 1 2009
7,794,789 Multi-station deposition apparatus and method 0 2009
7,846,840 Method for forming tungsten materials during vapor deposition processes 0 2009
7,860,597 Atomic layer deposition apparatus 1 2009
8,114,789 Formation of a tantalum-nitride layer 0 2010
7,923,069 Multi-station deposition apparatus and method 0 2010
8,027,746 Atomic layer deposition apparatus 0 2010
8,187,970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 0 2010
 
MICRON TECHNOLOGY, INC. (32)
6,559,472 Film composition 39 2002
6,596,636 ALD method to improve surface coverage 47 2002
6,861,094 Methods for forming thin layers of materials on micro-device workpieces 24 2002
6,838,114 Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 37 2002
7,118,783 Methods and apparatus for vapor processing of micro-device workpieces 2 2002
6,821,347 Apparatus and method for depositing materials onto microelectronic workpieces 40 2002
6,955,725 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 7 2002
6,835,980 Semiconductor device with novel film composition 0 2003
7,335,396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers 10 2003
7,344,755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers 1 2003
7,235,138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces 0 2003
7,422,635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces 3 2003
7,056,806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 13 2003
7,282,239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers 3 2003
7,323,231 Apparatus and methods for plasma vapor deposition processes 4 2003
7,581,511 Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes 3 2003
7,647,886 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers 0 2003
7,527,693 Apparatus for improved delivery of metastable species 1 2003
7,258,892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition 4 2003
7,906,393 Methods for forming small-scale capacitor structures 0 2004
7,584,942 Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers 0 2004
8,133,554 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 0 2004
7,393,562 Deposition methods for improved delivery of metastable species 3 2004
7,699,932 Reactors, systems and methods for depositing thin films onto microfeature workpieces 0 2004
6,949,827 Semiconductor device with novel film composition 0 2004
7,588,804 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 0 2004
7,387,685 Apparatus and method for depositing materials onto microelectronic workpieces 3 2004
7,481,887 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 1 2004
7,399,499 Methods of gas delivery for deposition processes and methods of depositing material on a substrate 1 2005
7,279,398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 1 2006
7,771,537 Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition 1 2006
8,384,192 Methods for forming small-scale capacitor structures 0 2011
 
ASM AMERICA, INC. (21)
7,816,236 Selective deposition of silicon-containing films 1 2006
7,687,383 Methods of depositing electrically active doped crystalline Si-containing films 1 2006
7,438,760 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition 9 2006
8,278,176 Selective epitaxial formation of semiconductor films 1 2006
7,611,751 Vapor deposition of metal carbide films 1 2006
7,863,163 Epitaxial deposition of doped semiconductor materials 3 2006
7,598,170 Plasma-enhanced ALD of tantalum nitride films 0 2007
7,595,270 Passivated stoichiometric metal nitride films 1 2007
7,713,874 Periodic plasma annealing in an ALD-type process 0 2007
7,893,433 Thin films and methods of making them 0 2007
7,759,199 Stressor for engineered strain on channel 6 2007
8,268,409 Plasma-enhanced deposition of metal carbide films 0 2007
7,939,447 Inhibitors for selective deposition of silicon containing films 1 2007
7,655,543 Separate injection of reactive species in selective formation of films 1 2007
8,383,525 Plasma-enhanced deposition process for forming a metal oxide thin film and related structures 0 2008
7,666,474 Plasma-enhanced pulsed deposition of metal carbide films 1 2008
7,648,690 Methods of making substitutionally carbon-doped crystalline Si-containing materials by chemical vapor deposition 0 2008
8,360,001 Process for deposition of semiconductor films 0 2009
8,367,528 Cyclical epitaxial deposition and etch 0 2009
7,897,491 Separate injection of reactive species in selective formation of films 1 2009
8,329,569 Deposition of ruthenium or ruthenium dioxide 0 2010
 
ASM INTERNATIONAL N.V. (11)
6,511,539 Apparatus and method for growth of a thin film 253 1999
6,727,169 Method of making conformal lining layers for damascene metallization 69 2000
6,652,924 Sequential chemical vapor deposition 87 2001
7,141,499 Apparatus and method for growth of a thin film 3 2002
6,764,546 Apparatus and method for growth of a thin film 15 2002
7,102,235 Conformal lining layers for damascene metallization 5 2003
8,025,922 Enhanced deposition of noble metals 0 2006
7,666,773 Selective deposition of noble metal thin films 9 2006
7,431,767 Apparatus and method for growth of a thin film 0 2006
7,955,979 Method of growing electrical conductors 0 2008
7,985,669 Selective deposition of noble metal thin films 0 2009
 
GENUS, INC. (6)
6,200,893 Radical-assisted sequential CVD 460 1999
6,503,330 Apparatus and method to achieve continuous interface and ultrathin film during atomic layer deposition 99 1999
6,551,399 Fully integrated process for MIM capacitors using atomic layer deposition 65 2000
6,475,910 Radical-assisted sequential CVD 151 2000
6,451,695 Radical-assisted sequential CVD 226 2000
6,617,173 Integration of ferromagnetic films with ultrathin insulating film using atomic layer deposition 30 2001
 
ASM JAPAN K.K. (5)
7,476,618 Selective formation of metal layers in an integrated circuit 9 2005
7,655,564 Method for forming Ta-Ru liner layer for Cu wiring 5 2007
7,799,674 Ruthenium alloy film for copper interconnects 1 2008
8,084,104 Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition 0 2008
8,133,555 Method for forming metal film by ALD using beta-diketone metal complex 0 2008
 
SAMSUNG ELECTRONICS CO., LTD. (5)
6,638,855 Method of filling contact hole of semiconductor device 11 2000
6,955,983 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer 3 2003
7,384,866 Methods of forming metal interconnections of semiconductor devices by treating a barrier metal layer 0 2005
7,439,192 Method of forming a layer on a semiconductor substrate 0 2005
7,902,090 Method of forming a layer on a semiconductor substrate 1 2008
 
ASM GENITECH KOREA LTD. (3)
7,141,278 Thin film forming method 47 2001
7,485,349 Thin film forming method 4 2006
8,273,408 Methods of depositing a ruthenium film 0 2008
 
HYNIX SEMICONDUCTOR INC. (2)
7,045,445 Method for fabricating semiconductor device by using PECYCLE-CVD process 0 2003
7,375,024 Method for fabricating metal interconnection line with use of barrier metal layer formed in low temperature 2 2004
 
IMEC (2)
6,664,192 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes 38 2002
6,852,635 Method for bottomless deposition of barrier layers in integrated circuit metallization schemes 27 2003
 
DONGBUANAM SEMICONDUCTOR INC. (1)
7,060,609 Method of manufacturing a semiconductor device 0 2003
 
INTEL CORPORATION (1)
7,220,671 Organometallic precursors for the chemical phase deposition of metal films in interconnect applications 9 2005
 
INTELLECTUAL DISCOVERY CO., LTD. (1)
6,849,298 Method for forming diffusion barrier film of semiconductor device 6 2002
 
IXYS CH GMBH (1)
7,342,984 Counting clock cycles over the duration of a first character and using a remainder value to determine when to sample a bit of a second character 1 2003
 
QIMONDA AG (1)
6,960,524 Method for production of a metallic or metal-containing layer 0 2003
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
7,235,482 Method of manufacturing a contact interconnection layer containing a metal and nitrogen by atomic layer deposition for deep sub-micron semiconductor technology 2 2003
 
TOKYO ELECTRON LIMITED (1)
6,913,996 Method of forming metal wiring and semiconductor manufacturing apparatus for forming metal wiring 1 2001