EFG crystal growth apparatus
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United States of America Patent
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Oct 31, 2000
Grant Date -
N/A
app pub date -
Mar 25, 1999
filing date -
Mar 25, 1999
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Abstract
A new EFG (Edge-defined Film-fed Growth) crucible/die configuration is provided which (a) overcomes the tendency for silicon feed material to form a solid mass near the center hub region in the hot-zone during the crystal growth and (b) prevent the crucible/die unit from fracturing its supporting susceptor during cool-down.
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