Self-aligned copper interconnect structure and method of manufacturing same
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United States of America Patent
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Oct 31, 2000
Grant Date -
N/A
app pub date -
Apr 21, 1999
filing date -
Sep 3, 1997
priority date (Note) -
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Abstract
A copper interconnect structure is formed in a semiconductor device using self-aligned copper or tungsten via pillars to connect upper and lower copper interconnect layers separated by a dielectric. The lower copper interconnect layer is formed on an underlying layer. The via pillars are formed on the lower copper interconnect layer. The copper upper interconnect layer is formed to make electrical contact to exposed upper surfaces of the via pillars.
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