Importance

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Abstract

A CVD apparatus for processing semiconductor wafers (W) one by one has a process chamber (2) and a worktable (3). A resistance heating wire (31) is embedded in the worktable such that the upper surface of the worktable functions as a mount surface (3a) for mounting a wafer. The worktable is provided therein with first support means (4) having three vertical lifter pins (41, 42, 43) and second support means (5) having three vertical lifter pins (51, 52, 53). The wafer is moved down from a transfer position to the mount surface by the second support means. The wafer is heated on the mount surface up to a process temperature by contact heating, then is moved by the first support means up to a process position where it is slightly floated above the mount surface. The wafer is heated at the process position and kept at the process temperature by non-contact heating with radiation heat from the mount surface. In this state, a process gas is supplied and a polysilicon film is formed on the wafer.

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First Claim