Monitoring method of an ion implantation process
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United States of America Patent
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Oct 31, 2000
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N/A
app pub date -
Mar 17, 1999
filing date -
Mar 18, 1998
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Abstract
A method is to characterize a process of ion implantation and includes a step of the measurement, by a spectroscopic ellipsometer, of the ellipsometric parameters (tan.psi., cos.delta.)of a film of organic resin present on the surface of a wafer that has received ion bombardment. The film of resin includes at least one upper layer of carbonized or damaged resin.
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