Single electron resistor memory device and method for use thereof
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United States of America Patent
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Oct 31, 2000
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N/A
app pub date -
Aug 27, 1998
filing date -
Aug 27, 1998
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Abstract
A method of operating a memory cell formed from semiconductor material by storing data represented by one or more electrons in islands of conductive material that are situated in anodically-defined pores formed in the semiconductor material. The islands are insulated from the semiconductor material by dielectric material. The memory cell storing the data is accessed, and an electrical parameter that is manifested in response to a stimulus is sampled. Based on the sample of the electrical parameter, it is determined whether one or more electrons are stored by the memory cell.
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