Semiconductor device having an active layer with no grain boundary
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United States of America Patent
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Nov 7, 2000
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N/A
app pub date -
Mar 2, 1998
filing date -
Mar 17, 1995
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Abstract
A method of manufacturing a semiconductor includes the steps of: forming a first semiconductor film on a substrate having an insulating surface; applying an energy to the first semiconductor film to crystallize the first semiconductor film; patterning the first semiconductor film to form a region that forms a seed crystal; etching the seed crystal to selectively leave a predetermined crystal face in the seed crystal; covering the seed crystal to form a second semiconductor film; and applying an energy to the second semiconductor film to conduct a crystal growth from the seed crystal in the second semiconductor film.
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