Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

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United States of America Patent

PATENT NO 6144060
SERIAL NO

09127353

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO57278

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Byung-hee Seoul, KR 99 1385
Kim, Yeong-kwan Kyungki-do, KR 22 2057
Lee, Sang-in Kyungki-do, KR 83 3975
Lee, Sang-min Kyungki-do, KR 206 2089
Park, Chang-soo Kyungki-do, KR 67 3131
Park, In-seon Seoul, KR 9 460

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 5639316 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal 48 1995
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
* 5438023 Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like 44 1994
 
RPX CLEARINGHOUSE LLC (2)
* 5330931 Method of making a capacitor for an integrated circuit 59 1993
* 5452178 Structure and method of making a capacitor for an intergrated circuit 116 1994
 
NATIONAL SEMICONDUCTOR CORPORATION (1)
* 5350705 Ferroelectric memory cell arrangement having a split capacitor plate structure 87 1992
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5426075 Method of manufacturing ferroelectric bismuth layered oxides 46 1994
 
HITACHI, LTD. (1)
* 5434742 Capacitor for semiconductor integrated circuit and method of manufacturing the same 13 1992
 
RADIANT TECHNOLOGY CORPORATION (1)
* 5212620 Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers 19 1992
* Cited By Examiner

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (8)
* 2002/0094,632 Capacitor fabrication methods and capacitor constructions 3 2002
* 2004/0143,370 Valve control system for atomic layer deposition chamber 2 2003
* 2004/0161,636 Method of depositing thin films for magnetic heads 17 2004
* 2005/0145,337 Apparatus for forming thin layers of materials on micro-device workpieces 14 2004
* 2005/0193,947 Deposition reactors and systems 1 2005
* 2006/0008,965 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 3 2005
* 2007/0178,640 Capacitor fabrication methods and capacitor constructions 0 2007
* 2007/0187,735 Method of manufacturing semiconductor device, and semiconductor device 3 2007
 
COLOR ACCESS, INC. (1)
* 6887795 Method of growing electrical conductors 42 2002
 
CYPRESS SEMICONDUCTOR CORPORATION (2)
* 6750066 Precision high-K intergate dielectric layer 81 2002
9012299 Metal-insualtor-metal (MIM) device and method of formation thereof 0 2014
 
SPANSION LLC (2)
* 8828837 Metal-insulator-metal (MIM) device and method of formation thereof 0 2013
* 2013/0237,030 METAL-INSULATOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREOF 0 2013
 
MICRON TECHNOLOGY, INC. (46)
7217615 Capacitor fabrication methods including forming a conductive layer 2 2000
7112503 Enhanced surface area capacitor fabrication methods 1 2000
* 6420230 Capacitor fabrication methods and capacitor constructions 92 2000
7109542 Capacitor constructions having a conductive layer 0 2001
* 7053432 Enhanced surface area capacitor fabrication methods 2 2001
7288808 Capacitor constructions with enhanced surface area 0 2002
6861094 Methods for forming thin layers of materials on micro-device workpieces 26 2002
* 2003/0203,626 Apparatus and method for forming thin layers of materials on micro-device workpieces 3 2002
6838114 Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 43 2002
7118783 Methods and apparatus for vapor processing of micro-device workpieces 3 2002
* 2004/0000,270 Methods and apparatus for vapor processing of micro-device workpieces 3 2002
6821347 Apparatus and method for depositing materials onto microelectronic workpieces 51 2002
* 2004/0003,777 Apparatus and method for depositing materials onto microelectronic workpieces 15 2002
6955725 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 7 2002
* 2004/0083,961 Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices 5 2002
7335396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers 15 2003
7440255 Capacitor constructions and methods of forming 19 2003
7344755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers 3 2003
7235138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces 4 2003
7422635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces 5 2003
7056806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 15 2003
7282239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers 4 2003
7323231 Apparatus and methods for plasma vapor deposition processes 6 2003
7581511 Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes 103 2003
7647886 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers 4 2003
7527693 Apparatus for improved delivery of metastable species 3 2003
7258892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition 4 2003
7906393 Methods for forming small-scale capacitor structures 3 2004
7584942 Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers 0 2004
8133554 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 1 2004
7393562 Deposition methods for improved delivery of metastable species 3 2004
7699932 Reactors, systems and methods for depositing thin films onto microfeature workpieces 15 2004
7588804 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 0 2004
7387685 Apparatus and method for depositing materials onto microelectronic workpieces 5 2004
7481887 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 1 2004
7399499 Methods of gas delivery for deposition processes and methods of depositing material on a substrate 5 2005
* 2007/0049,021 ATOMIC LAYER DEPOSITION METHOD 3 2005
7279398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 2 2006
7771537 Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition 2 2006
7582549 Atomic layer deposited barium strontium titanium oxide films 12 2006
8581352 Electronic devices including barium strontium titanium oxide films 1 2009
8518184 Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition 0 2010
8384192 Methods for forming small-scale capacitor structures 0 2011
* 2011/0163,416 METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES 1 2011
9023436 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 0 2012
9202686 Electronic devices including barium strontium titanium oxide films 0 2013
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 2004/0077,142 Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer 7 2002
 
Agilent Technologies Texas Instruments Incorporated (1)
* 6548343 Method of fabricating a ferroelectric memory cell 36 2000
 
SAMSUNG ELECTRONICS CO., LTD. (10)
* 6821862 METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A METAL OXIDE LAYER DISPOSED ON ANOTHER LAYER TO PROTECT THE OTHER LAYER FROM DIFFUSION OF IMPURITIES AND INTEGRATED CIRCUIT DEVICES MANUFACTURED USING SAME 75 2001
* 6603169 Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same 5 2001
* 6605835 Ferroelectric memory and its method of fabrication 12 2002
* 2002/0127,867 Semiconductor devices having a hydrogen diffusion barrier layer and methods of fabricating the same 25 2002
* 6664578 Ferroelectric memory device and method of forming the same 13 2002
7045416 Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices 0 2003
6815226 Ferroelectric memory device and method of forming the same 7 2003
* 2004/0005,724 Ferroelectric memory device and method of forming the same 2 2003
8257984 Ferroelectric capacitor and method of manufacturing the same 0 2005
* 2006/0102,944 Ferroelectric capacitor and method of manufacturing the same 0 2005
 
KABUSHIKI KAISHA TOSHIBA (6)
* 7166889 Semiconductor memory device having a gate electrode and a method of manufacturing thereof 13 2003
* 2004/0013,009 Semiconductor memory device having a gate electrode and a method of manufacturing thereof 9 2003
* 7501675 Semiconductor device and method of manufacturing the same 3 2005
* 2005/0230,728 Semiconductor device and method of manufacturing the same 0 2005
7573120 Semiconductor device and method of manufacturing the same 2 2005
* 2006/0017,086 Semiconductor device and method for manufacturing the same 6 2005
 
FUJITSU SEMICONDUCTOR LIMITED (3)
* 2003/0222,299 Semiconductor device and method of manufacturing the same 8 2003
* 7501325 Method for fabricating semiconductor device 0 2005
* 2006/0199,342 Method for fabricating semiconductor device 3 2005
 
HYNIX SEMICONDUCTOR INC. (9)
6800542 Method for fabricating ruthenium thin layer 45 2002
* 2002/0173,054 Method for fabricating ruthenium thin layer 19 2002
6825129 Method for manufacturing memory device 24 2002
* 2002/0187,578 Method for manufacturing memory device 6 2002
6673668 Method of forming capacitor of a semiconductor memory device 7 2002
6689623 Method for forming a capacitor 5 2002
7042034 Capacitor 1 2004
* 2004/0147,088 Capacitor 2 2004
* 7745323 Metal interconnection of a semiconductor device and method of fabricating the same 0 2005
 
LAPIS SEMICONDUCTOR CO., LTD. (1)
* 6623985 Structure of and manufacturing method for semiconductor device employing ferroelectric substance 14 2000
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (7)
* 6627462 Semiconductor device having a capacitor and method for the manufacture thereof 16 2000
* 6723598 Method for manufacturing aluminum oxide films for use in semiconductor devices 3 2000
* 6589886 Method for manufacturing aluminum oxide film for use in a semiconductor device 15 2000
* 6690052 Semiconductor device having a capacitor with a multi-layer dielectric 4 2000
* 6579755 High dielectric capacitor and method of manufacturing the same 8 2001
7012001 Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode 0 2003
* 2004/0082,126 Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof 0 2003
 
ASM JAPAN K.K. (4)
7655564 Method for forming Ta-Ru liner layer for Cu wiring 18 2007
7799674 Ruthenium alloy film for copper interconnects 6 2008
8084104 Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition 1 2008
8133555 Method for forming metal film by ALD using beta-diketone metal complex 1 2008
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 2005/0210,455 Method for generating an executable workflow code from an unstructured cyclic process model 10 2005
 
POLARIS INNOVATIONS LIMITED (3)
* 6940111 Radiation protection in integrated circuits 1 2002
6960524 Method for production of a metallic or metal-containing layer 0 2003
* 2004/0132,313 Method for production of a metallic or metal-containing layer 0 2003
 
U.S. BANK NATIONAL ASSOCIATION (3)
* 2002/0024,080 Capacitor fabrication methods and capacitor constructions 3 2001
* 2004/0094,092 Apparatus for improved delivery of metastable species 2 2003
* 2005/0120,954 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 13 2004
 
VEECO INSTRUMENTS INC. (4)
* 7037574 Atomic layer deposition for fabricating thin films 57 2001
7071118 Method and apparatus for fabricating a conformal thin film on a substrate 2 2003
* 2005/0100,669 Method and apparatus for fabricating a conformal thin film on a substrate 48 2003
* 2005/0166,843 Apparatus for fabricating a conformal thin film on a substrate 0 2005
 
ASM GENITECH KOREA LTD. (2)
7541284 Method of depositing Ru films having high density 17 2007
8273408 Methods of depositing a ruthenium film 0 2008
 
IXYS INTL LIMITED (3)
* 7768052 Process to improve high-performance capacitors in integrated MOS technologies 1 2005
8017475 Process to improve high-performance capacitors in integrated MOS technologies 2 2010
8324069 Method of fabricating high-performance capacitors in integrated MOS technologies 13 2011
 
ASM INTERNATIONAL N.V. (30)
* 7108747 Method for growing oxide thin films containing barium and strontium 32 1999
* 6592942 Method for vapour deposition of a film onto a substrate 81 2000
6902763 Method for depositing nanolaminate thin films on sensitive surfaces 68 2000
6660660 Methods for making a dielectric stack in an integrated circuit 219 2001
* 7220669 Thin films for magnetic device 31 2001
* 2002/0076,837 Thin films for magnetic device 25 2001
6759081 Method of depositing thin films for magnetic heads 62 2002
6806145 Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer 15 2002
7494927 Method of growing electrical conductors 25 2003
* 2004/0005,753 Method of growing electrical conductors 53 2003
6818517 Methods of depositing two or more layers on a substrate in situ 72 2003
7038284 Methods for making a dielectric stack in an integrated circuit 23 2003
* 2004/0043,557 Methods for making a dielectric stack in an integrated circuit 28 2003
7749871 Method for depositing nanolaminate thin films on sensitive surfaces 5 2005
8025922 Enhanced deposition of noble metals 0 2006
7666773 Selective deposition of noble metal thin films 22 2006
8993055 Enhanced thin film deposition 6 2006
7955979 Method of growing electrical conductors 4 2008
7985669 Selective deposition of noble metal thin films 6 2009
8536058 Method of growing electrical conductors 2 2011
8927403 Selective deposition of noble metal thin films 14 2011
8501275 Enhanced deposition of noble metals 0 2011
9129897 Metal silicide, metal germanide, methods for making the same 5 2012
9379011 Methods for depositing nickel films and for making nickel silicide and nickel germanide 1 2012
9062390 Crystalline strontium titanate and methods of forming the same 0 2012
9127351 Enhanced thin film deposition 0 2013
9587307 Enhanced deposition of noble metals 0 2013
9469899 Selective deposition of noble metal thin films 0 2014
9365926 Precursors and methods for atomic layer deposition of transition metal oxides 0 2015
9634106 Doped metal germanide and methods for making the same 0 2015
 
FUJITSU LIMITED (1)
* 2004/0212,041 Semiconductor device and method of manufacturing the same 6 2003
 
ASM IP HOLDING B.V. (7)
8846550 Silane or borane treatment of metal thin films 4 2013
8841182 Silane and borane treatments for titanium carbide films 20 2013
9111749 Silane or borane treatment of metal thin films 1 2014
9236247 Silane and borane treatments for titanium carbide films 1 2014
9394609 Atomic layer deposition of aluminum fluoride thin films 0 2015
9607842 Methods of forming metal silicides 0 2015
9583348 Silane and borane treatments for titanium carbide films 0 2016
 
NXP USA, INC. (2)
7751177 Thin-film capacitor with a field modification layer 0 2009
* 2009/0279,226 THIN-FILM CAPACITOR WITH A FIELD MODIFICATION LAYER 0 2009
 
ASM AMERICA, INC. (3)
8383525 Plasma-enhanced deposition process for forming a metal oxide thin film and related structures 22 2008
8329569 Deposition of ruthenium or ruthenium dioxide 3 2010
9631272 Atomic layer deposition of metal carbide films using aluminum hydrocarbon compounds 0 2013
 
QIMONDA AG (1)
6707082 Ferroelectric transistor 2 2002
 
ROUND ROCK RESEARCH, LLC (3)
6753618 MIM capacitor with metal nitride electrode materials and method of formation 63 2002
* 2003/0168,750 MIM capacitor with metal nitride electrode materials and method of formation 13 2002
6881642 Method of forming a MIM capacitor with metal nitride electrode 18 2003
 
INTEL CORPORATION (3)
7306956 Variable temperature and dose atomic layer deposition 3 2003
9129827 Conversion of strain-inducing buffer to electrical insulator 1 2012
9472613 Conversion of strain-inducing buffer to electrical insulator 0 2015
 
APPLIED MATERIALS, INC. (180)
6620723 Formation of boride barrier layers using chemisorption techniques 129 2000
6551929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 234 2000
6855368 Method and system for controlling the presence of fluorine in refractory metal layers 31 2000
7101795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 25 2000
6951804 Formation of a tantalum-nitride layer 62 2001
6660126 Lid assembly for a processing system to facilitate sequential deposition techniques 105 2001
6734020 Valve control system for atomic layer deposition chamber 83 2001
6849545 System and method to form a composite film stack utilizing sequential deposition techniques 28 2001
7085616 Atomic layer deposition apparatus 24 2001
6718126 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 118 2001
6936906 Integration of barrier layer and seed layer 38 2001
6638810 Tantalum nitride CVD deposition by tantalum oxide densification 147 2001
6878206 Lid assembly for a processing system to facilitate sequential deposition techniques 133 2001
6729824 Dual robot processing system 25 2001
6765178 Chamber for uniform substrate heating 16 2001
6916398 Gas delivery apparatus and method for atomic layer deposition 124 2001
6620670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 127 2002
6827978 Deposition of tungsten films 43 2002
6833161 Cyclical deposition of tungsten nitride for metal oxide gate electrode 66 2002
7439191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications 0 2002
6911391 Integration of titanium and titanium nitride layers 35 2002
6846516 Multiple precursor cyclical deposition system 80 2002
6720027 Cyclical deposition of a variable content titanium silicon nitride layer 58 2002
6875271 Simultaneous cyclical deposition in different processing regions 54 2002
6869838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications 10 2002
6838125 Method of film deposition using activated precursor gases 84 2002
7211144 Pulsed nucleation deposition of tungsten layers 67 2002
6998014 Apparatus and method for plasma assisted deposition 72 2002
6955211 Method and apparatus for gas temperature control in a semiconductor processing system 53 2002
7081271 Cyclical deposition of refractory metal silicon nitride 59 2002
7066194 Valve design and configuration for fast delivery system 38 2002
6772072 Method and apparatus for monitoring solid precursor delivery 92 2002
6915592 Method and apparatus for generating gas to a processing chamber 66 2002
6773507 Apparatus and method for fast-cycle atomic layer deposition 93 2002
6825134 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 58 2002
* 2003/0186,561 Deposition of film layers 5 2002
6905737 Method of delivering activated species for rapid cyclical deposition 35 2002
7780785 Gas delivery apparatus for atomic layer deposition 20 2002
* 2003/0198,754 Aluminum oxide chamber and process 95 2002
6939801 Selective deposition of a barrier layer on a dielectric material 30 2002
* 2003/0224,578 Selective deposition of a barrier layer on a dielectric material 7 2002
6825447 Apparatus and method for uniform substrate heating and contaminate collection 11 2002
7175713 Apparatus for cyclical deposition of thin films 43 2003
6753248 Post metal barrier/adhesion film 3 2003
6821563 Gas distribution system for cyclical layer deposition 164 2003
6972267 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 35 2003
6831004 Formation of boride barrier layers using chemisorption techniques 53 2003
7279432 System and method for forming an integrated barrier layer 14 2003
* 2003/0232,497 System and method for forming an integrated barrier layer 8 2003
7041335 Titanium tantalum nitride silicide layer 65 2003
6905541 Method and apparatus of generating PDMAT precursor 76 2003
* 2004/0014,320 Method and apparatus of generating PDMAT precursor 15 2003
7540920 Silicon-containing layer deposition with silicon compounds 7 2003
* 2004/0224,089 Silicon-containing layer deposition with silicon compounds 42 2003
7204886 Apparatus and method for hybrid chemical processing 55 2003
7201803 Valve control system for atomic layer deposition chamber 16 2003
6998579 Chamber for uniform substrate heating 2 2003
7262133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line 3 2003
7244683 Integration of ALD/CVD barriers with porous low k materials 6 2003
8323754 Stabilization of high-k dielectric materials 2 2004
8119210 Formation of a silicon oxynitride layer on a high-k dielectric material 3 2004
7049226 Integration of ALD tantalum nitride for copper metallization 49 2004
* 2005/0106,865 Integration of ALD tantalum nitride for copper metallization 72 2004
7211508 Atomic layer deposition of tantalum based barrier materials 65 2004
7022948 Chamber for uniform substrate heating 5 2004
7396565 Multiple precursor cyclical deposition system 4 2004
7304004 System and method for forming a gate dielectric 14 2004
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7905959 Lid assembly for a processing system to facilitate sequential deposition techniques 21 2004
7208413 Formation of boride barrier layers using chemisorption techniques 48 2004
7312128 Selective epitaxy process with alternating gas supply 23 2004
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7429402 Ruthenium as an underlayer for tungsten film deposition 34 2004
7405158 Methods for depositing tungsten layers employing atomic layer deposition techniques 21 2005
7235492 Low temperature etchant for treatment of silicon-containing surfaces 23 2005
7241686 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 34 2005
7352048 Integration of barrier layer and seed layer 4 2005
7780788 Gas delivery apparatus for atomic layer deposition 7 2005
7094680 Formation of a tantalum-nitride layer 49 2005
7270709 Method and apparatus of generating PDMAT precursor 30 2005
8343279 Apparatuses for atomic layer deposition 5 2005
7779784 Apparatus and method for plasma assisted deposition 4 2005
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7094685 Integration of titanium and titanium nitride layers 27 2005
7682940 Use of Cl2 and/or HCl during silicon epitaxial film formation 14 2005
7514358 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 1 2005
7781326 Formation of a tantalum-nitride layer 0 2005
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7115494 Method and system for controlling the presence of fluorine in refractory metal layers 24 2006
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7798096 Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool 2 2006
7228873 Valve design and configuration for fast delivery system 35 2006
7588736 Apparatus and method for generating a chemical precursor 4 2006
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7521365 Selective epitaxy process with alternating gas supply 9 2006
7892602 Cyclical deposition of refractory metal silicon nitride 3 2006
7651955 Method for forming silicon-containing materials during a photoexcitation deposition process 10 2006
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8318266 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 2 2006
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7645339 Silicon-containing layer deposition with silicon compounds 8 2006
* 2007/0240,632 Silicon-containing layer deposition with silicon compounds 6 2006
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7850779 Apparatus and process for plasma-enhanced atomic layer deposition 21 2006
7682946 Apparatus and process for plasma-enhanced atomic layer deposition 9 2006
7678194 Method for providing gas to a processing chamber 1 2006
7429361 Method and apparatus for providing precursor gas to a processing chamber 14 2006
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7402210 Apparatus and method for hybrid chemical processing 29 2007
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7501343 Formation of boride barrier layers using chemisorption techniques 13 2007
7572715 Selective epitaxy process with alternating gas supply 9 2007
7494908 Apparatus for integration of barrier layer and seed layer 4 2007
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7465666 Method for forming tungsten materials during vapor deposition processes 22 2007
7867914 System and method for forming an integrated barrier layer 2 2007
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7585762 Vapor deposition processes for tantalum carbide nitride materials 3 2007
7824743 Deposition processes for titanium nitride barrier and aluminum 2 2007
9032906 Apparatus and process for plasma-enhanced atomic layer deposition 2 2007
8282992 Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 7 2007
7794544 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system 19 2007
8158526 Endpoint detection for photomask etching 1 2007
8092695 Endpoint detection for photomask etching 1 2007
7531468 System and method for forming a gate dielectric 3 2007
7758697 Silicon-containing layer deposition with silicon compounds 4 2008
7659158 Atomic layer deposition processes for non-volatile memory devices 10 2008
7964505 Atomic layer deposition of tungsten materials 18 2008
7611990 Deposition methods for barrier and tungsten materials 16 2008
7591907 Apparatus for hybrid chemical processing 14 2008
7745333 Methods for depositing tungsten layers employing atomic layer deposition techniques 15 2008
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9051641 Cobalt deposition on barrier surfaces 0 2008
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8491967 In-situ chamber treatment and deposition process 2 2008
7569191 Method and apparatus for providing precursor gas to a processing chamber 7 2008
7732327 Vapor deposition of tungsten materials 14 2008
8123860 Apparatus for cyclical depositing of thin films 1 2008
8146896 Chemical precursor ampoule for vapor deposition processes 2 2008
7709385 Method for depositing tungsten-containing layers by vapor deposition techniques 12 2008
7674715 Method for forming tungsten materials during vapor deposition processes 12 2008
7670945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 2 2008
7732325 Plasma-enhanced cyclic layer deposition process for barrier layers 5 2009
7691742 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 1 2009
7867896 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 0 2009
8387557 Method for forming silicon-containing materials during a photoexcitation deposition process 3 2009
7846840 Method for forming tungsten materials during vapor deposition processes 0 2009
8043907 Atomic layer deposition processes for non-volatile memory devices 3 2010
7960256 Use of CL2 and/or HCL during silicon epitaxial film formation 7 2010
8071167 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials 2 2010
8668776 Gas delivery apparatus and method for atomic layer deposition 2 2010
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8187970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 3 2010
8586456 Use of CL2 and/or HCL during silicon epitaxial film formation 0 2011
8778204 Methods for reducing photoresist interference when monitoring a target layer in a plasma process 0 2011
8492284 Low temperature etchant for treatment of silicon-containing surfaces 0 2011
8445389 Etchant treatment processes for substrate surfaces and chamber surfaces 3 2012
9012334 Formation of a tantalum-nitride layer 0 2012
8563424 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 2 2012
8900469 Etch rate detection for anti-reflective coating layer and absorber layer etching 0 2012
8808559 Etch rate detection for reflective multi-material layers etching 0 2012
8961804 Etch rate detection for photomask etching 0 2012
8778574 Method for etching EUV material layers utilized to form a photomask 0 2013
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9587310 Lid assembly for a processing system to facilitate sequential deposition techniques 0 2014
9418890 Method for tuning a deposition rate during an atomic layer deposition process 0 2014
9209074 Cobalt deposition on barrier surfaces 0 2015
 
TEXAS INSTRUMENTS INCORPORATED (17)
* 6617178 Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors 4 2002
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* 2004/0099,893 USE OF AMORPHOUS ALUMINUM OXIDE ON A CAPACITOR SIDEWALL FOR USE AS A HYDROGEN BARRIER 2 2002
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* 2005/0012,126 Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same 1 2003
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* 2005/0101,034 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 1 2003
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* 2005/0205,906 FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING THE SAME 1 2004
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* 2006/0118,841 Ferroelectric capacitor with parallel resistance for ferroelectric memory 12 2004
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CELIS SEMICONDUCTOR CORPORATION (1)
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TOKYO ELECTRON LIMITED (2)
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* Cited By Examiner