US Patent No: 6,144,060

Number of patents in Portfolio can not be more than 2000

Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

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Abstract

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Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

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First Claim

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO58060

International Classification(s)

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Byung-hee Seoul, KR 99 1349
Kim, Yeong-kwan Kyungki-do, KR 22 1965
Lee, Sang-in Kyungki-do, KR 83 3825
Lee, Sang-min Kyungki-do, KR 203 1927
Park, Chang-soo Kyungki-do, KR 67 3051
Park, In-seon Seoul, KR 9 447

Cited Art Landscape

Patent Info (Count) # Cites Year
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 5,639,316 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal 48 1995
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
* 5,438,023 Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like 44 1994
 
RPX CLEARINGHOUSE LLC (2)
* 5,330,931 Method of making a capacitor for an integrated circuit 59 1993
* 5,452,178 Structure and method of making a capacitor for an intergrated circuit 110 1994
 
National Semiconductor Corporation (1)
* 5,350,705 Ferroelectric memory cell arrangement having a split capacitor plate structure 87 1992
 
RAMTRON INTERNATIONAL CORPORATION (1)
* 5,426,075 Method of manufacturing ferroelectric bismuth layered oxides 46 1994
 
HITACHI, LTD. (1)
* 5,434,742 Capacitor for semiconductor integrated circuit and method of manufacturing the same 13 1992
 
RADIANT TECHNOLOGY CORPORATION (1)
* 5,212,620 Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers 19 1992
* Cited By Examiner

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Patent Info (Count) # Cites Year
 
Other [Check patent profile for assignment information] (8)
* 2002/0094,632 Capacitor fabrication methods and capacitor constructions 3 2002
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* 2004/0161,636 Method of depositing thin films for magnetic heads 17 2004
* 2005/0145,337 Apparatus for forming thin layers of materials on micro-device workpieces 14 2004
* 2005/0193,947 Deposition reactors and systems 1 2005
* 2006/0008,965 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 3 2005
* 2007/0178,640 Capacitor fabrication methods and capacitor constructions 0 2007
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Color Access, Inc. (1)
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CYPRESS SEMICONDUCTOR CORPORATION (2)
* 6,750,066 Precision high-K intergate dielectric layer 80 2002
9,012,299 Metal-insualtor-metal (MIM) device and method of formation thereof 0 2014
 
SPANSION LLC (2)
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* 2013/0237,030 METAL-INSULATOR-METAL (MIM) DEVICE AND METHOD OF FORMATION THEREOF 0 2013
 
MICRON TECHNOLOGY, INC. (46)
7,217,615 Capacitor fabrication methods including forming a conductive layer 2 2000
7,112,503 Enhanced surface area capacitor fabrication methods 1 2000
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7,109,542 Capacitor constructions having a conductive layer 0 2001
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7,288,808 Capacitor constructions with enhanced surface area 0 2002
6,861,094 Methods for forming thin layers of materials on micro-device workpieces 26 2002
* 2003/0203,626 Apparatus and method for forming thin layers of materials on micro-device workpieces 3 2002
6,838,114 Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 43 2002
7,118,783 Methods and apparatus for vapor processing of micro-device workpieces 3 2002
* 2004/0000,270 Methods and apparatus for vapor processing of micro-device workpieces 2 2002
6,821,347 Apparatus and method for depositing materials onto microelectronic workpieces 50 2002
* 2004/0003,777 Apparatus and method for depositing materials onto microelectronic workpieces 15 2002
6,955,725 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 7 2002
* 2004/0083,961 Gas delivery system for pulsed-type deposition processes used in the manufacturing of micro-devices 5 2002
7,335,396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers 14 2003
7,440,255 Capacitor constructions and methods of forming 18 2003
7,344,755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers 3 2003
7,235,138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces 3 2003
7,422,635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces 3 2003
7,056,806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 15 2003
7,282,239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers 4 2003
7,323,231 Apparatus and methods for plasma vapor deposition processes 6 2003
7,581,511 Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes 95 2003
7,647,886 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers 2 2003
7,527,693 Apparatus for improved delivery of metastable species 3 2003
7,258,892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition 4 2003
7,906,393 Methods for forming small-scale capacitor structures 3 2004
7,584,942 Ampoules for producing a reaction gas and systems for depositing materials onto microfeature workpieces in reaction chambers 0 2004
8,133,554 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 1 2004
7,393,562 Deposition methods for improved delivery of metastable species 3 2004
7,699,932 Reactors, systems and methods for depositing thin films onto microfeature workpieces 15 2004
7,588,804 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 0 2004
7,387,685 Apparatus and method for depositing materials onto microelectronic workpieces 5 2004
7,481,887 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 1 2004
7,399,499 Methods of gas delivery for deposition processes and methods of depositing material on a substrate 5 2005
* 2007/0049,021 ATOMIC LAYER DEPOSITION METHOD 2 2005
7,279,398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 2 2006
7,771,537 Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition 2 2006
7,582,549 Atomic layer deposited barium strontium titanium oxide films 11 2006
8,581,352 Electronic devices including barium strontium titanium oxide films 1 2009
8,518,184 Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition 0 2010
8,384,192 Methods for forming small-scale capacitor structures 0 2011
* 2011/0163,416 METHODS FOR FORMING SMALL-SCALE CAPACITOR STRUCTURES 1 2011
9,023,436 Methods for depositing material onto microfeature workpieces in reaction chambers and systems for depositing materials onto microfeature workpieces 0 2012
9,202,686 Electronic devices including barium strontium titanium oxide films 0 2013
 
FREESCALE SEMICONDUCTOR, INC. (2)
7,751,177 Thin-film capacitor with a field modification layer 0 2009
* 2009/0279,226 THIN-FILM CAPACITOR WITH A FIELD MODIFICATION LAYER 0 2009
 
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. (1)
* 2004/0077,142 Atomic layer deposition and plasma treatment method for forming microelectronic capacitor structure with aluminum oxide containing dual dielectric layer 6 2002
 
Agilent Technologies Texas Instruments Incorporated (1)
* 6,548,343 Method of fabricating a ferroelectric memory cell 35 2000
 
SAMSUNG ELECTRONICS CO., LTD. (10)
* 6,821,862 METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A METAL OXIDE LAYER DISPOSED ON ANOTHER LAYER TO PROTECT THE OTHER LAYER FROM DIFFUSION OF IMPURITIES AND INTEGRATED CIRCUIT DEVICES MANUFACTURED USING SAME 75 2001
* 6,603,169 Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same 5 2001
* 6,605,835 Ferroelectric memory and its method of fabrication 12 2002
* 2002/0127,867 Semiconductor devices having a hydrogen diffusion barrier layer and methods of fabricating the same 25 2002
* 6,664,578 Ferroelectric memory device and method of forming the same 13 2002
7,045,416 Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices 0 2003
6,815,226 Ferroelectric memory device and method of forming the same 7 2003
* 2004/0005,724 Ferroelectric memory device and method of forming the same 2 2003
8,257,984 Ferroelectric capacitor and method of manufacturing the same 0 2005
* 2006/0102,944 Ferroelectric capacitor and method of manufacturing the same 0 2005
 
KABUSHIKI KAISHA TOSHIBA (6)
* 7,166,889 Semiconductor memory device having a gate electrode and a method of manufacturing thereof 13 2003
* 2004/0013,009 Semiconductor memory device having a gate electrode and a method of manufacturing thereof 8 2003
* 7,501,675 Semiconductor device and method of manufacturing the same 3 2005
* 2005/0230,728 Semiconductor device and method of manufacturing the same 0 2005
7,573,120 Semiconductor device and method of manufacturing the same 2 2005
* 2006/0017,086 Semiconductor device and method for manufacturing the same 6 2005
 
FUJITSU SEMICONDUCTOR LIMITED (3)
* 2003/0222,299 Semiconductor device and method of manufacturing the same 8 2003
* 7,501,325 Method for fabricating semiconductor device 0 2005
* 2006/0199,342 Method for fabricating semiconductor device 3 2005
 
HYNIX SEMICONDUCTOR INC. (9)
6,800,542 Method for fabricating ruthenium thin layer 42 2002
* 2002/0173,054 Method for fabricating ruthenium thin layer 16 2002
6,825,129 Method for manufacturing memory device 24 2002
* 2002/0187,578 Method for manufacturing memory device 5 2002
6,673,668 Method of forming capacitor of a semiconductor memory device 6 2002
6,689,623 Method for forming a capacitor 5 2002
7,042,034 Capacitor 1 2004
* 2004/0147,088 Capacitor 2 2004
* 7,745,323 Metal interconnection of a semiconductor device and method of fabricating the same 0 2005
 
LAPIS SEMICONDUCTOR CO., LTD. (1)
* 6,623,985 Structure of and manufacturing method for semiconductor device employing ferroelectric substance 14 2000
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (7)
* 6,627,462 Semiconductor device having a capacitor and method for the manufacture thereof 16 2000
* 6,723,598 Method for manufacturing aluminum oxide films for use in semiconductor devices 3 2000
* 6,589,886 Method for manufacturing aluminum oxide film for use in a semiconductor device 15 2000
* 6,690,052 Semiconductor device having a capacitor with a multi-layer dielectric 4 2000
* 6,579,755 High dielectric capacitor and method of manufacturing the same 8 2001
7,012,001 Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode 0 2003
* 2004/0082,126 Semiconductor device incorporated therein high K capacitor dielectric and method for the manufacture thereof 0 2003
 
ASM JAPAN K.K. (4)
7,655,564 Method for forming Ta-Ru liner layer for Cu wiring 14 2007
7,799,674 Ruthenium alloy film for copper interconnects 4 2008
8,084,104 Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition 1 2008
8,133,555 Method for forming metal film by ALD using beta-diketone metal complex 1 2008
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
* 2005/0210,455 Method for generating an executable workflow code from an unstructured cyclic process model 10 2005
 
POLARIS INNOVATIONS LIMITED (3)
* 6,940,111 Radiation protection in integrated circuits 1 2002
6,960,524 Method for production of a metallic or metal-containing layer 0 2003
* 2004/0132,313 Method for production of a metallic or metal-containing layer 0 2003
 
U.S. BANK NATIONAL ASSOCIATION (3)
* 2002/0024,080 Capacitor fabrication methods and capacitor constructions 3 2001
* 2004/0094,092 Apparatus for improved delivery of metastable species 2 2003
* 2005/0120,954 Apparatus for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 13 2004
 
VEECO INSTRUMENTS INC. (4)
* 7,037,574 Atomic layer deposition for fabricating thin films 57 2001
7,071,118 Method and apparatus for fabricating a conformal thin film on a substrate 2 2003
* 2005/0100,669 Method and apparatus for fabricating a conformal thin film on a substrate 36 2003
* 2005/0166,843 Apparatus for fabricating a conformal thin film on a substrate 0 2005
 
ASM GENITECH KOREA LTD. (2)
7,541,284 Method of depositing Ru films having high density 14 2007
8,273,408 Methods of depositing a ruthenium film 0 2008
 
IXYS INTL LIMITED (3)
* 7,768,052 Process to improve high-performance capacitors in integrated MOS technologies 0 2005
8,017,475 Process to improve high-performance capacitors in integrated MOS technologies 1 2010
8,324,069 Method of fabricating high-performance capacitors in integrated MOS technologies 8 2011
 
ASM INTERNATIONAL N.V. (28)
* 7,108,747 Method for growing oxide thin films containing barium and strontium 30 1999
* 6,592,942 Method for vapour deposition of a film onto a substrate 79 2000
6,902,763 Method for depositing nanolaminate thin films on sensitive surfaces 62 2000
6,660,660 Methods for making a dielectric stack in an integrated circuit 211 2001
* 7,220,669 Thin films for magnetic device 28 2001
* 2002/0076,837 Thin films for magnetic device 25 2001
6,759,081 Method of depositing thin films for magnetic heads 58 2002
6,806,145 Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer 13 2002
7,494,927 Method of growing electrical conductors 21 2003
* 2004/0005,753 Method of growing electrical conductors 50 2003
6,818,517 Methods of depositing two or more layers on a substrate in situ 71 2003
7,038,284 Methods for making a dielectric stack in an integrated circuit 23 2003
* 2004/0043,557 Methods for making a dielectric stack in an integrated circuit 24 2003
7,749,871 Method for depositing nanolaminate thin films on sensitive surfaces 4 2005
8,025,922 Enhanced deposition of noble metals 0 2006
7,666,773 Selective deposition of noble metal thin films 19 2006
8,993,055 Enhanced thin film deposition 2 2006
7,955,979 Method of growing electrical conductors 4 2008
7,985,669 Selective deposition of noble metal thin films 6 2009
8,536,058 Method of growing electrical conductors 2 2011
8,927,403 Selective deposition of noble metal thin films 4 2011
8,501,275 Enhanced deposition of noble metals 0 2011
9,129,897 Metal silicide, metal germanide, methods for making the same 2 2012
9,379,011 Methods for depositing nickel films and for making nickel silicide and nickel germanide 0 2012
9,062,390 Crystalline strontium titanate and methods of forming the same 0 2012
9,127,351 Enhanced thin film deposition 0 2013
9,469,899 Selective deposition of noble metal thin films 0 2014
9,365,926 Precursors and methods for atomic layer deposition of transition metal oxides 0 2015
 
FUJITSU LIMITED (1)
* 2004/0212,041 Semiconductor device and method of manufacturing the same 6 2003
 
ASM IP HOLDING B.V. (5)
8,846,550 Silane or borane treatment of metal thin films 3 2013
8,841,182 Silane and borane treatments for titanium carbide films 7 2013
9,111,749 Silane or borane treatment of metal thin films 0 2014
9,236,247 Silane and borane treatments for titanium carbide films 0 2014
9,394,609 Atomic layer deposition of aluminum fluoride thin films 0 2015
 
ASM AMERICA, INC. (2)
8,383,525 Plasma-enhanced deposition process for forming a metal oxide thin film and related structures 16 2008
8,329,569 Deposition of ruthenium or ruthenium dioxide 3 2010
 
QIMONDA AG (1)
6,707,082 Ferroelectric transistor 2 2002
 
ROUND ROCK RESEARCH, LLC (3)
6,753,618 MIM capacitor with metal nitride electrode materials and method of formation 63 2002
* 2003/0168,750 MIM capacitor with metal nitride electrode materials and method of formation 13 2002
6,881,642 Method of forming a MIM capacitor with metal nitride electrode 18 2003
 
INTEL CORPORATION (3)
7,306,956 Variable temperature and dose atomic layer deposition 3 2003
9,129,827 Conversion of strain-inducing buffer to electrical insulator 1 2012
9,472,613 Conversion of strain-inducing buffer to electrical insulator 0 2015
 
APPLIED MATERIALS, INC. (178)
6,620,723 Formation of boride barrier layers using chemisorption techniques 127 2000
6,551,929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 227 2000
6,855,368 Method and system for controlling the presence of fluorine in refractory metal layers 31 2000
7,101,795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 25 2000
6,951,804 Formation of a tantalum-nitride layer 62 2001
6,660,126 Lid assembly for a processing system to facilitate sequential deposition techniques 103 2001
6,734,020 Valve control system for atomic layer deposition chamber 81 2001
6,849,545 System and method to form a composite film stack utilizing sequential deposition techniques 28 2001
7,085,616 Atomic layer deposition apparatus 24 2001
6,718,126 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 115 2001
6,936,906 Integration of barrier layer and seed layer 37 2001
6,638,810 Tantalum nitride CVD deposition by tantalum oxide densification 138 2001
6,878,206 Lid assembly for a processing system to facilitate sequential deposition techniques 123 2001
6,729,824 Dual robot processing system 25 2001
6,765,178 Chamber for uniform substrate heating 16 2001
6,916,398 Gas delivery apparatus and method for atomic layer deposition 122 2001
6,620,670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 124 2002
6,827,978 Deposition of tungsten films 41 2002
6,833,161 Cyclical deposition of tungsten nitride for metal oxide gate electrode 64 2002
7,439,191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications 0 2002
6,911,391 Integration of titanium and titanium nitride layers 34 2002
6,846,516 Multiple precursor cyclical deposition system 78 2002
6,720,027 Cyclical deposition of a variable content titanium silicon nitride layer 58 2002
6,875,271 Simultaneous cyclical deposition in different processing regions 53 2002
6,869,838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications 10 2002
6,838,125 Method of film deposition using activated precursor gases 83 2002
7,211,144 Pulsed nucleation deposition of tungsten layers 60 2002
6,998,014 Apparatus and method for plasma assisted deposition 72 2002
6,955,211 Method and apparatus for gas temperature control in a semiconductor processing system 53 2002
7,081,271 Cyclical deposition of refractory metal silicon nitride 55 2002
7,066,194 Valve design and configuration for fast delivery system 38 2002
6,772,072 Method and apparatus for monitoring solid precursor delivery 91 2002
6,915,592 Method and apparatus for generating gas to a processing chamber 65 2002
6,773,507 Apparatus and method for fast-cycle atomic layer deposition 92 2002
6,825,134 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 47 2002
* 2003/0186,561 Deposition of film layers 4 2002
6,905,737 Method of delivering activated species for rapid cyclical deposition 35 2002
7,780,785 Gas delivery apparatus for atomic layer deposition 16 2002
6,939,801 Selective deposition of a barrier layer on a dielectric material 30 2002
* 2003/0224,578 Selective deposition of a barrier layer on a dielectric material 7 2002
6,825,447 Apparatus and method for uniform substrate heating and contaminate collection 11 2002
7,175,713 Apparatus for cyclical deposition of thin films 42 2003
6,753,248 Post metal barrier/adhesion film 3 2003
6,821,563 Gas distribution system for cyclical layer deposition 158 2003
6,972,267 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 35 2003
6,831,004 Formation of boride barrier layers using chemisorption techniques 53 2003
7,279,432 System and method for forming an integrated barrier layer 14 2003
* 2003/0232,497 System and method for forming an integrated barrier layer 8 2003
7,041,335 Titanium tantalum nitride silicide layer 59 2003
6,905,541 Method and apparatus of generating PDMAT precursor 74 2003
* 2004/0014,320 Method and apparatus of generating PDMAT precursor 14 2003
7,540,920 Silicon-containing layer deposition with silicon compounds 5 2003
* 2004/0224,089 Silicon-containing layer deposition with silicon compounds 40 2003
7,204,886 Apparatus and method for hybrid chemical processing 53 2003
7,201,803 Valve control system for atomic layer deposition chamber 16 2003
6,998,579 Chamber for uniform substrate heating 2 2003
7,262,133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line 3 2003
7,244,683 Integration of ALD/CVD barriers with porous low k materials 6 2003
8,323,754 Stabilization of high-k dielectric materials 1 2004
8,119,210 Formation of a silicon oxynitride layer on a high-k dielectric material 3 2004
7,049,226 Integration of ALD tantalum nitride for copper metallization 48 2004
* 2005/0106,865 Integration of ALD tantalum nitride for copper metallization 62 2004
7,211,508 Atomic layer deposition of tantalum based barrier materials 62 2004
7,022,948 Chamber for uniform substrate heating 4 2004
7,396,565 Multiple precursor cyclical deposition system 4 2004
7,304,004 System and method for forming a gate dielectric 14 2004
7,033,922 Method and system for controlling the presence of fluorine in refractory metal layers 25 2004
7,905,959 Lid assembly for a processing system to facilitate sequential deposition techniques 15 2004
7,208,413 Formation of boride barrier layers using chemisorption techniques 48 2004
7,312,128 Selective epitaxy process with alternating gas supply 23 2004
7,115,499 Cyclical deposition of tungsten nitride for metal oxide gate electrode 23 2004
7,429,402 Ruthenium as an underlayer for tungsten film deposition 30 2004
7,405,158 Methods for depositing tungsten layers employing atomic layer deposition techniques 18 2005
7,235,492 Low temperature etchant for treatment of silicon-containing surfaces 22 2005
7,241,686 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 30 2005
7,352,048 Integration of barrier layer and seed layer 3 2005
7,780,788 Gas delivery apparatus for atomic layer deposition 6 2005
7,094,680 Formation of a tantalum-nitride layer 49 2005
7,270,709 Method and apparatus of generating PDMAT precursor 28 2005
8,343,279 Apparatuses for atomic layer deposition 4 2005
7,779,784 Apparatus and method for plasma assisted deposition 3 2005
7,294,208 Apparatus for providing gas to a processing chamber 18 2005
7,094,685 Integration of titanium and titanium nitride layers 26 2005
7,682,940 Use of Cl2 and/or HCl during silicon epitaxial film formation 14 2005
7,514,358 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 1 2005
7,781,326 Formation of a tantalum-nitride layer 0 2005
8,093,154 Etchant treatment processes for substrate surfaces and chamber surfaces 2 2005
7,470,611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 3 2005
7,115,494 Method and system for controlling the presence of fluorine in refractory metal layers 24 2006
7,560,352 Selective deposition 6 2006
7,798,096 Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool 2 2006
7,228,873 Valve design and configuration for fast delivery system 35 2006
7,588,736 Apparatus and method for generating a chemical precursor 3 2006
7,547,952 Method for hafnium nitride deposition 7 2006
7,517,775 Methods of selective deposition of heavily doped epitaxial SiGe 4 2006
7,521,365 Selective epitaxy process with alternating gas supply 9 2006
7,892,602 Cyclical deposition of refractory metal silicon nitride 2 2006
7,651,955 Method for forming silicon-containing materials during a photoexcitation deposition process 6 2006
7,648,927 Method for forming silicon-containing materials during a photoexcitation deposition process 5 2006
7,416,979 Deposition methods for barrier and tungsten materials 32 2006
7,732,305 Use of Cl2 and/or HCl during silicon epitaxial film formation 6 2006
7,235,486 Method for forming tungsten materials during vapor deposition processes 15 2006
8,318,266 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 2 2006
8,293,328 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 1 2006
7,682,984 Interferometer endpoint monitoring device 0 2006
7,429,516 Tungsten nitride atomic layer deposition processes 9 2006
7,645,339 Silicon-containing layer deposition with silicon compounds 7 2006
* 2007/0240,632 Silicon-containing layer deposition with silicon compounds 5 2006
7,775,508 Ampoule for liquid draw and vapor draw with a continuous level sensor 1 2006
7,850,779 Apparatus and process for plasma-enhanced atomic layer deposition 20 2006
7,682,946 Apparatus and process for plasma-enhanced atomic layer deposition 9 2006
7,678,194 Method for providing gas to a processing chamber 0 2006
7,429,361 Method and apparatus for providing precursor gas to a processing chamber 13 2006
7,695,563 Pulsed deposition process for tungsten nucleation 9 2007
7,402,210 Apparatus and method for hybrid chemical processing 27 2007
7,595,263 Atomic layer deposition of barrier materials 9 2007
7,674,337 Gas manifolds for use during epitaxial film formation 0 2007
8,110,489 Process for forming cobalt-containing materials 7 2007
7,501,344 Formation of boride barrier layers using chemisorption techniques 9 2007
7,501,343 Formation of boride barrier layers using chemisorption techniques 9 2007
7,572,715 Selective epitaxy process with alternating gas supply 9 2007
7,494,908 Apparatus for integration of barrier layer and seed layer 3 2007
7,465,665 Method for depositing tungsten-containing layers by vapor deposition techniques 18 2007
7,465,666 Method for forming tungsten materials during vapor deposition processes 18 2007
7,867,914 System and method for forming an integrated barrier layer 2 2007
7,588,980 Methods of controlling morphology during epitaxial layer formation 6 2007
8,029,620 Methods of forming carbon-containing silicon epitaxial layers 71 2007
7,597,758 Chemical precursor ampoule for vapor deposition processes 4 2007
7,678,298 Tantalum carbide nitride materials by vapor deposition processes 0 2007
7,585,762 Vapor deposition processes for tantalum carbide nitride materials 3 2007
7,824,743 Deposition processes for titanium nitride barrier and aluminum 2 2007
9,032,906 Apparatus and process for plasma-enhanced atomic layer deposition 0 2007
8,282,992 Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 5 2007
7,794,544 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system 17 2007
8,158,526 Endpoint detection for photomask etching 1 2007
8,092,695 Endpoint detection for photomask etching 1 2007
7,531,468 System and method for forming a gate dielectric 3 2007
7,758,697 Silicon-containing layer deposition with silicon compounds 3 2008
7,659,158 Atomic layer deposition processes for non-volatile memory devices 10 2008
7,964,505 Atomic layer deposition of tungsten materials 14 2008
7,611,990 Deposition methods for barrier and tungsten materials 12 2008
7,591,907 Apparatus for hybrid chemical processing 12 2008
7,745,333 Methods for depositing tungsten layers employing atomic layer deposition techniques 9 2008
7,745,329 Tungsten nitride atomic layer deposition processes 8 2008
9,051,641 Cobalt deposition on barrier surfaces 0 2008
7,737,007 Methods to fabricate MOSFET devices using a selective deposition process 5 2008
8,491,967 In-situ chamber treatment and deposition process 1 2008
7,569,191 Method and apparatus for providing precursor gas to a processing chamber 6 2008
7,732,327 Vapor deposition of tungsten materials 10 2008
8,123,860 Apparatus for cyclical depositing of thin films 1 2008
8,146,896 Chemical precursor ampoule for vapor deposition processes 2 2008
7,709,385 Method for depositing tungsten-containing layers by vapor deposition techniques 8 2008
7,674,715 Method for forming tungsten materials during vapor deposition processes 8 2008
7,670,945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 2 2008
7,732,325 Plasma-enhanced cyclic layer deposition process for barrier layers 5 2009
7,691,742 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 1 2009
7,867,896 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 0 2009
8,387,557 Method for forming silicon-containing materials during a photoexcitation deposition process 3 2009
7,846,840 Method for forming tungsten materials during vapor deposition processes 0 2009
8,043,907 Atomic layer deposition processes for non-volatile memory devices 3 2010
7,960,256 Use of CL2 and/or HCL during silicon epitaxial film formation 6 2010
8,071,167 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials 2 2010
8,668,776 Gas delivery apparatus and method for atomic layer deposition 1 2010
8,114,789 Formation of a tantalum-nitride layer 0 2010
8,187,970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 3 2010
8,586,456 Use of CL2 and/or HCL during silicon epitaxial film formation 0 2011
8,778,204 Methods for reducing photoresist interference when monitoring a target layer in a plasma process 0 2011
8,492,284 Low temperature etchant for treatment of silicon-containing surfaces 0 2011
8,445,389 Etchant treatment processes for substrate surfaces and chamber surfaces 2 2012
9,012,334 Formation of a tantalum-nitride layer 0 2012
8,563,424 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 2 2012
8,900,469 Etch rate detection for anti-reflective coating layer and absorber layer etching 0 2012
8,808,559 Etch rate detection for reflective multi-material layers etching 0 2012
8,961,804 Etch rate detection for photomask etching 0 2012
8,778,574 Method for etching EUV material layers utilized to form a photomask 0 2013
9,018,108 Low shrinkage dielectric films 2 2013
9,418,890 Method for tuning a deposition rate during an atomic layer deposition process 0 2014
9,209,074 Cobalt deposition on barrier surfaces 0 2015
 
Texas Instruments Incorporated (17)
* 6,617,178 Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors 4 2002
6,876,021 Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier 13 2002
* 2004/0099,893 USE OF AMORPHOUS ALUMINUM OXIDE ON A CAPACITOR SIDEWALL FOR USE AS A HYDROGEN BARRIER 2 2002
6,841,396 VIA0 etch process for FRAM integration 8 2003
6,984,857 Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same 15 2003
* 2005/0012,126 Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same 1 2003
7,019,352 Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components 4 2003
7,001,821 Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device 10 2003
* 2005/0101,034 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 1 2003
6,982,448 Ferroelectric capacitor hydrogen barriers and methods for fabricating the same 8 2004
* 2005/0205,906 FERROELECTRIC CAPACITOR HYDROGEN BARRIERS AND METHODS FOR FABRICATING THE SAME 1 2004
7,180,141 Ferroelectric capacitor with parallel resistance for ferroelectric memory 10 2004
* 2006/0118,841 Ferroelectric capacitor with parallel resistance for ferroelectric memory 9 2004
7,183,602 Ferroelectric capacitor hydrogen barriers and methods for fabricating the same 3 2005
7,514,734 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 0 2005
7,344,939 Ferroelectric capacitor with parallel resistance for ferroelectric memory 1 2006
* 2007/0090,461 Ferroelectric Capacitor with Parallel Resistance for Ferroelectric Memory 2 2006
 
Celis Semiconductor Corporation (1)
* 7,053,433 Encapsulated ferroelectric array 0 2002
 
TOKYO ELECTRON LIMITED (2)
* 9,034,774 Film forming method using plasma 0 2012
* 2014/0051,263 FILM FORMING METHOD 0 2012
* Cited By Examiner