US Patent No: 6,144,060

Number of patents in Portfolio can not be more than 2000

Integrated circuit devices having buffer layers therein which contain metal oxide stabilized by heat treatment under low temperature

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ATTORNEY / AGENT: (SPONSORED)

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Abstract

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Integrated circuit devices include a first dielectric layer, an electrically insulating layer on the first dielectric layer and an an aluminum oxide buffer layer formed by atomic layer deposition (ALD) and stabilized by heat treatment at a temperature of less than about 600.degree. C., between the first dielectric layer and the electrically insulating layer. The first dielectric layer may comprise a high dielectric material such as a ferroelectric or paraelectric material. The electrically insulating layer may also comprise a material selected from the group consisting of silicon dioxide, borophosphosilicate glass (BPSG) and phosphosilicate glass (PSG). To provide a preferred integrated circuit capacitor, a substrate may be provided and an interlayer dielectric layer may be provided on the substrate. Here, a metal layer may also be provided between the interlayer dielectric layer and the first dielectric layer. The metal layer may comprise a material selected from the group consisting of Pt, Ru, Ir, and Pd.

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Patent Owner(s)

Patent OwnerAddressTotal Patents
SAMSUNG ELECTRONICS CO., LTD.SUWON-SI GYEONGGI-DO50439

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Inventor(s)

Inventor Name Address # of filed Patents Total Citations
Kim, Byung-hee Seoul, KR 119 1103
Kim, Yeong-kwan Kyungki-do, KR 23 1636
Lee, Sang-in Anyang-si, KR 64 3247
Lee, Sang-Min Seoul, KR 228 1195
Park, Chang-Soo Seoul, KR 77 2550
Park, In-Seon Seoul, KR 9 399

Cited Art Landscape

Patent Info (Count) # Cites Year
 
NORTEL NETWORKS LIMITED (2)
5,330,931 Method of making a capacitor for an integrated circuit 58 1993
5,452,178 Structure and method of making a capacitor for an intergrated circuit 97 1994
 
CYPRESS SEMICONDUCTOR CORPORATION (1)
5,438,023 Passivation method and structure for a ferroelectric integrated circuit using hard ceramic materials or the like 39 1994
 
HITACHI, LTD. (1)
5,434,742 Capacitor for semiconductor integrated circuit and method of manufacturing the same 13 1992
 
INTERNATIONAL BUSINESS MACHINES CORPORATION (1)
5,639,316 Thin film multi-layer oxygen diffusion barrier consisting of aluminum on refractory metal 47 1995
 
NATIONAL SEMICONDUCTOR CORPORATION (1)
5,350,705 Ferroelectric memory cell arrangement having a split capacitor plate structure 84 1992
 
RADIANT TECHNOLOGY CORPORATION (1)
5,212,620 Method for isolating SiO.sub.2 layers from PZT, PLZT, and platinum layers 17 1992
 
RAMTRON INTERNATIONAL CORPORATION (1)
5,426,075 Method of manufacturing ferroelectric bismuth layered oxides 45 1994

Patent Citation Ranking

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Patent Info (Count) # Cites Year
 
APPLIED MATERIALS, INC. (160)
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6,551,929 Bifurcated deposition process for depositing refractory metal layers employing atomic layer deposition and chemical vapor deposition techniques 204 2000
6,855,368 Method and system for controlling the presence of fluorine in refractory metal layers 30 2000
7,101,795 Method and apparatus for depositing refractory metal layers employing sequential deposition techniques to form a nucleation layer 24 2000
6,951,804 Formation of a tantalum-nitride layer 55 2001
6,660,126 Lid assembly for a processing system to facilitate sequential deposition techniques 97 2001
6,734,020 Valve control system for atomic layer deposition chamber 75 2001
6,849,545 System and method to form a composite film stack utilizing sequential deposition techniques 25 2001
7,085,616 Atomic layer deposition apparatus 19 2001
6,718,126 Apparatus and method for vaporizing solid precursor for CVD or atomic layer deposition 101 2001
6,936,906 Integration of barrier layer and seed layer 34 2001
6,638,810 Tantalum nitride CVD deposition by tantalum oxide densification 53 2001
6,878,206 Lid assembly for a processing system to facilitate sequential deposition techniques 33 2001
6,729,824 Dual robot processing system 20 2001
6,765,178 Chamber for uniform substrate heating 14 2001
6,916,398 Gas delivery apparatus and method for atomic layer deposition 96 2001
6,620,670 Process conditions and precursors for atomic layer deposition (ALD) of AL2O3 114 2002
6,827,978 Deposition of tungsten films 33 2002
6,833,161 Cyclical deposition of tungsten nitride for metal oxide gate electrode 46 2002
7,439,191 Deposition of silicon layers for active matrix liquid crystal display (AMLCD) applications 0 2002
6,911,391 Integration of titanium and titanium nitride layers 30 2002
6,846,516 Multiple precursor cyclical deposition system 75 2002
6,720,027 Cyclical deposition of a variable content titanium silicon nitride layer 52 2002
6,875,271 Simultaneous cyclical deposition in different processing regions 48 2002
6,869,838 Deposition of passivation layers for active matrix liquid crystal display (AMLCD) applications 8 2002
6,838,125 Method of film deposition using activated precursor gases 76 2002
7,211,144 Pulsed nucleation deposition of tungsten layers 40 2002
6,998,014 Apparatus and method for plasma assisted deposition 61 2002
6,955,211 Method and apparatus for gas temperature control in a semiconductor processing system 46 2002
7,081,271 Cyclical deposition of refractory metal silicon nitride 35 2002
7,066,194 Valve design and configuration for fast delivery system 35 2002
6,772,072 Method and apparatus for monitoring solid precursor delivery 81 2002
6,915,592 Method and apparatus for generating gas to a processing chamber 56 2002
6,773,507 Apparatus and method for fast-cycle atomic layer deposition 83 2002
6,825,134 Deposition of film layers by alternately pulsing a precursor and high frequency power in a continuous gas flow 34 2002
6,905,737 Method of delivering activated species for rapid cyclical deposition 30 2002
7,780,785 Gas delivery apparatus for atomic layer deposition 6 2002
6,939,801 Selective deposition of a barrier layer on a dielectric material 28 2002
6,825,447 Apparatus and method for uniform substrate heating and contaminate collection 7 2002
7,175,713 Apparatus for cyclical deposition of thin films 36 2003
6,753,248 Post metal barrier/adhesion film 3 2003
6,821,563 Gas distribution system for cyclical layer deposition 128 2003
6,972,267 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 33 2003
6,831,004 Formation of boride barrier layers using chemisorption techniques 50 2003
7,279,432 System and method for forming an integrated barrier layer 11 2003
7,041,335 Titanium tantalum nitride silicide layer 38 2003
6,905,541 Method and apparatus of generating PDMAT precursor 63 2003
7,540,920 Silicon-containing layer deposition with silicon compounds 1 2003
7,204,886 Apparatus and method for hybrid chemical processing 39 2003
7,201,803 Valve control system for atomic layer deposition chamber 14 2003
6,998,579 Chamber for uniform substrate heating 2 2003
7,262,133 Enhancement of copper line reliability using thin ALD tan film to cap the copper line 3 2003
7,244,683 Integration of ALD/CVD barriers with porous low k materials 5 2003
8,323,754 Stabilization of high-k dielectric materials 0 2004
8,119,210 Formation of a silicon oxynitride layer on a high-k dielectric material 1 2004
7,049,226 Integration of ALD tantalum nitride for copper metallization 45 2004
7,211,508 Atomic layer deposition of tantalum based barrier materials 50 2004
7,022,948 Chamber for uniform substrate heating 3 2004
7,396,565 Multiple precursor cyclical deposition system 4 2004
7,304,004 System and method for forming a gate dielectric 12 2004
7,033,922 Method and system for controlling the presence of fluorine in refractory metal layers 24 2004
7,905,959 Lid assembly for a processing system to facilitate sequential deposition techniques 4 2004
7,208,413 Formation of boride barrier layers using chemisorption techniques 46 2004
7,312,128 Selective epitaxy process with alternating gas supply 18 2004
7,115,499 Cyclical deposition of tungsten nitride for metal oxide gate electrode 22 2004
7,429,402 Ruthenium as an underlayer for tungsten film deposition 20 2004
7,405,158 Methods for depositing tungsten layers employing atomic layer deposition techniques 10 2005
7,235,492 Low temperature etchant for treatment of silicon-containing surfaces 20 2005
7,241,686 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 12 2005
7,352,048 Integration of barrier layer and seed layer 3 2005
7,780,788 Gas delivery apparatus for atomic layer deposition 3 2005
7,094,680 Formation of a tantalum-nitride layer 46 2005
7,270,709 Method and apparatus of generating PDMAT precursor 25 2005
8,343,279 Apparatuses for atomic layer deposition 1 2005
7,779,784 Apparatus and method for plasma assisted deposition 1 2005
7,294,208 Apparatus for providing gas to a processing chamber 14 2005
7,094,685 Integration of titanium and titanium nitride layers 21 2005
7,682,940 Use of Cl2 and/or HCl during silicon epitaxial film formation 10 2005
7,514,358 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 1 2005
7,781,326 Formation of a tantalum-nitride layer 0 2005
8,093,154 Etchant treatment processes for substrate surfaces and chamber surfaces 2 2005
7,470,611 In situ deposition of a low K dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 3 2005
7,115,494 Method and system for controlling the presence of fluorine in refractory metal layers 23 2006
7,560,352 Selective deposition 5 2006
7,798,096 Plasma, UV and ion/neutral assisted ALD or CVD in a batch tool 2 2006
7,228,873 Valve design and configuration for fast delivery system 30 2006
7,588,736 Apparatus and method for generating a chemical precursor 2 2006
7,547,952 Method for hafnium nitride deposition 5 2006
7,517,775 Methods of selective deposition of heavily doped epitaxial SiGe 3 2006
7,521,365 Selective epitaxy process with alternating gas supply 7 2006
7,892,602 Cyclical deposition of refractory metal silicon nitride 1 2006
7,651,955 Method for forming silicon-containing materials during a photoexcitation deposition process 2 2006
7,648,927 Method for forming silicon-containing materials during a photoexcitation deposition process 2 2006
7,416,979 Deposition methods for barrier and tungsten materials 21 2006
7,732,305 Use of Cl2 and/or HCl during silicon epitaxial film formation 4 2006
7,235,486 Method for forming tungsten materials during vapor deposition processes 9 2006
8,318,266 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 0 2006
8,293,328 Enhanced copper growth with ultrathin barrier layer for high performance interconnects 0 2006
7,682,984 Interferometer endpoint monitoring device 0 2006
7,429,516 Tungsten nitride atomic layer deposition processes 9 2006
7,645,339 Silicon-containing layer deposition with silicon compounds 5 2006
7,775,508 Ampoule for liquid draw and vapor draw with a continuous level sensor 1 2006
7,850,779 Apparatus and process for plasma-enhanced atomic layer deposition 8 2006
7,682,946 Apparatus and process for plasma-enhanced atomic layer deposition 4 2006
7,678,194 Method for providing gas to a processing chamber 0 2006
7,429,361 Method and apparatus for providing precursor gas to a processing chamber 11 2006
7,695,563 Pulsed deposition process for tungsten nucleation 2 2007
7,402,210 Apparatus and method for hybrid chemical processing 21 2007
7,595,263 Atomic layer deposition of barrier materials 3 2007
7,674,337 Gas manifolds for use during epitaxial film formation 0 2007
8,110,489 Process for forming cobalt-containing materials 2 2007
7,501,344 Formation of boride barrier layers using chemisorption techniques 2 2007
7,501,343 Formation of boride barrier layers using chemisorption techniques 2 2007
7,572,715 Selective epitaxy process with alternating gas supply 6 2007
7,494,908 Apparatus for integration of barrier layer and seed layer 2 2007
7,465,665 Method for depositing tungsten-containing layers by vapor deposition techniques 12 2007
7,465,666 Method for forming tungsten materials during vapor deposition processes 12 2007
7,867,914 System and method for forming an integrated barrier layer 0 2007
7,588,980 Methods of controlling morphology during epitaxial layer formation 5 2007
8,029,620 Methods of forming carbon-containing silicon epitaxial layers 15 2007
7,597,758 Chemical precursor ampoule for vapor deposition processes 2 2007
7,678,298 Tantalum carbide nitride materials by vapor deposition processes 0 2007
7,585,762 Vapor deposition processes for tantalum carbide nitride materials 3 2007
7,824,743 Deposition processes for titanium nitride barrier and aluminum 1 2007
8,282,992 Methods for atomic layer deposition of hafnium-containing high-K dielectric materials 1 2007
7,794,544 Control of gas flow and delivery to suppress the formation of particles in an MOCVD/ALD system 7 2007
8,158,526 Endpoint detection for photomask etching 0 2007
8,092,695 Endpoint detection for photomask etching 0 2007
7,531,468 System and method for forming a gate dielectric 1 2007
7,758,697 Silicon-containing layer deposition with silicon compounds 0 2008
7,659,158 Atomic layer deposition processes for non-volatile memory devices 4 2008
7,964,505 Atomic layer deposition of tungsten materials 3 2008
7,611,990 Deposition methods for barrier and tungsten materials 2 2008
7,591,907 Apparatus for hybrid chemical processing 8 2008
7,745,333 Methods for depositing tungsten layers employing atomic layer deposition techniques 1 2008
7,745,329 Tungsten nitride atomic layer deposition processes 1 2008
7,737,007 Methods to fabricate MOSFET devices using a selective deposition process 1 2008
8,491,967 In-situ chamber treatment and deposition process 0 2008
7,569,191 Method and apparatus for providing precursor gas to a processing chamber 4 2008
7,732,327 Vapor deposition of tungsten materials 2 2008
8,123,860 Apparatus for cyclical depositing of thin films 0 2008
8,146,896 Chemical precursor ampoule for vapor deposition processes 0 2008
7,709,385 Method for depositing tungsten-containing layers by vapor deposition techniques 2 2008
7,674,715 Method for forming tungsten materials during vapor deposition processes 2 2008
7,670,945 In situ deposition of a low κ dielectric layer, barrier layer, etch stop, and anti-reflective coating for damascene application 2 2008
7,732,325 Plasma-enhanced cyclic layer deposition process for barrier layers 3 2009
7,691,742 Atomic layer deposition of tantalum-containing materials using the tantalum precursor TAIMATA 1 2009
7,867,896 Sequential deposition of tantalum nitride using a tantalum-containing precursor and a nitrogen-containing precursor 0 2009
8,387,557 Method for forming silicon-containing materials during a photoexcitation deposition process 1 2009
7,846,840 Method for forming tungsten materials during vapor deposition processes 0 2009
8,043,907 Atomic layer deposition processes for non-volatile memory devices 0 2010
7,960,256 Use of CL2 and/or HCL during silicon epitaxial film formation 1 2010
8,071,167 Surface pre-treatment for enhancement of nucleation of high dielectric constant materials 0 2010
8,668,776 Gas delivery apparatus and method for atomic layer deposition 0 2010
8,114,789 Formation of a tantalum-nitride layer 0 2010
8,187,970 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 1 2010
8,586,456 Use of CL2 and/or HCL during silicon epitaxial film formation 0 2011
8,492,284 Low temperature etchant for treatment of silicon-containing surfaces 0 2011
8,445,389 Etchant treatment processes for substrate surfaces and chamber surfaces 0 2012
8,563,424 Process for forming cobalt and cobalt silicide materials in tungsten contact applications 0 2012
 
MICRON TECHNOLOGY, INC. (38)
7,217,615 Capacitor fabrication methods including forming a conductive layer 1 2000
7,112,503 Enhanced surface area capacitor fabrication methods 1 2000
6,420,230 Capacitor fabrication methods and capacitor constructions 83 2000
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7,053,432 Enhanced surface area capacitor fabrication methods 2 2001
7,288,808 Capacitor constructions with enhanced surface area 0 2002
6,861,094 Methods for forming thin layers of materials on micro-device workpieces 25 2002
6,838,114 Methods for controlling gas pulsing in processes for depositing materials onto micro-device workpieces 39 2002
7,118,783 Methods and apparatus for vapor processing of micro-device workpieces 3 2002
6,821,347 Apparatus and method for depositing materials onto microelectronic workpieces 42 2002
6,955,725 Reactors with isolated gas connectors and methods for depositing materials onto micro-device workpieces 7 2002
7,335,396 Methods for controlling mass flow rates and pressures in passageways coupled to reaction chambers and systems for depositing material onto microfeature workpieces in reaction chambers 11 2003
7,440,255 Capacitor constructions and methods of forming 11 2003
7,344,755 Methods and apparatus for processing microfeature workpieces; methods for conditioning ALD reaction chambers 2 2003
7,235,138 Microfeature workpiece processing apparatus and methods for batch deposition of materials on microfeature workpieces 0 2003
7,422,635 Methods and apparatus for processing microfeature workpieces, e.g., for depositing materials on microfeature workpieces 3 2003
7,056,806 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 15 2003
7,282,239 Systems and methods for depositing material onto microfeature workpieces in reaction chambers 3 2003
7,323,231 Apparatus and methods for plasma vapor deposition processes 6 2003
7,581,511 Apparatus and methods for manufacturing microfeatures on workpieces using plasma vapor processes 6 2003
7,647,886 Systems for depositing material onto workpieces in reaction chambers and methods for removing byproducts from reaction chambers 0 2003
7,527,693 Apparatus for improved delivery of metastable species 1 2003
7,258,892 Methods and systems for controlling temperature during microfeature workpiece processing, e.g., CVD deposition 4 2003
7,906,393 Methods for forming small-scale capacitor structures 1 2004
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7,393,562 Deposition methods for improved delivery of metastable species 3 2004
7,699,932 Reactors, systems and methods for depositing thin films onto microfeature workpieces 4 2004
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7,387,685 Apparatus and method for depositing materials onto microelectronic workpieces 3 2004
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7,399,499 Methods of gas delivery for deposition processes and methods of depositing material on a substrate 1 2005
7,279,398 Microfeature workpiece processing apparatus and methods for controlling deposition of materials on microfeature workpieces 2 2006
7,771,537 Methods and systems for controlling temperature during microfeature workpiece processing, E.G. CVD deposition 2 2006
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8,518,184 Methods and systems for controlling temperature during microfeature workpiece processing, E.G., CVD deposition 0 2010
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ASM INTERNATIONAL N.V. (17)
7,108,747 Method for growing oxide thin films containing barium and strontium 20 1999
6,592,942 Method for vapour deposition of a film onto a substrate 73 2000
6,902,763 Method for depositing nanolaminate thin films on sensitive surfaces 41 2000
6,660,660 Methods for making a dielectric stack in an integrated circuit 188 2001
7,220,669 Thin films for magnetic device 18 2001
6,759,081 Method of depositing thin films for magnetic heads 43 2002
6,806,145 Low temperature method of forming a gate stack with a high k layer deposited over an interfacial oxide layer 10 2002
7,494,927 Method of growing electrical conductors 15 2003
6,818,517 Methods of depositing two or more layers on a substrate in situ 51 2003
7,038,284 Methods for making a dielectric stack in an integrated circuit 20 2003
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8,025,922 Enhanced deposition of noble metals 0 2006
7,666,773 Selective deposition of noble metal thin films 12 2006
7,955,979 Method of growing electrical conductors 2 2008
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8,536,058 Method of growing electrical conductors 0 2011
8,501,275 Enhanced deposition of noble metals 0 2011
 
TEXAS INSTRUMENTS INCORPORATED (11)
6,617,178 Test system for ferroelectric materials and noble metal electrodes in semiconductor capacitors 4 2002
6,876,021 Use of amorphous aluminum oxide on a capacitor sidewall for use as a hydrogen barrier 11 2002
6,841,396 VIA0 etch process for FRAM integration 7 2003
6,984,857 Hydrogen barrier for protecting ferroelectric capacitors in a semiconductor device and methods for fabricating the same 10 2003
7,019,352 Low silicon-hydrogen sin layer to inhibit hydrogen related degradation in semiconductor devices having ferroelectric components 3 2003
7,001,821 Method of forming and using a hardmask for forming ferroelectric capacitors in a semiconductor device 7 2003
6,982,448 Ferroelectric capacitor hydrogen barriers and methods for fabricating the same 5 2004
7,180,141 Ferroelectric capacitor with parallel resistance for ferroelectric memory 4 2004
7,183,602 Ferroelectric capacitor hydrogen barriers and methods for fabricating the same 2 2005
7,514,734 Hardmask for forming ferroelectric capacitors in a semiconductor device and methods for fabricating the same 0 2005
7,344,939 Ferroelectric capacitor with parallel resistance for ferroelectric memory 1 2006
 
SAMSUNG ELECTRONICS CO., LTD. (7)
6,821,862 METHODS OF MANUFACTURING INTEGRATED CIRCUIT DEVICES THAT INCLUDE A METAL OXIDE LAYER DISPOSED ON ANOTHER LAYER TO PROTECT THE OTHER LAYER FROM DIFFUSION OF IMPURITIES AND INTEGRATED CIRCUIT DEVICES MANUFACTURED USING SAME 67 2001
6,603,169 Ferroelectric capacitors for integrated circuit memory devices and methods of manufacturing same 5 2001
6,605,835 Ferroelectric memory and its method of fabrication 12 2002
6,664,578 Ferroelectric memory device and method of forming the same 10 2002
7,045,416 Methods of manufacturing ferroelectric capacitors for integrated circuit memory devices 0 2003
6,815,226 Ferroelectric memory device and method of forming the same 6 2003
8,257,984 Ferroelectric capacitor and method of manufacturing the same 0 2005
 
HYNIX SEMICONDUCTOR INC. (6)
6,800,542 Method for fabricating ruthenium thin layer 33 2002
6,825,129 Method for manufacturing memory device 19 2002
6,673,668 Method of forming capacitor of a semiconductor memory device 4 2002
6,689,623 Method for forming a capacitor 4 2002
7,042,034 Capacitor 1 2004
7,745,323 Metal interconnection of a semiconductor device and method of fabricating the same 0 2005
 
HYUNDAI ELECTRONICS INDUSTRIES CO., LTD. (6)
6,627,462 Semiconductor device having a capacitor and method for the manufacture thereof 14 2000
6,723,598 Method for manufacturing aluminum oxide films for use in semiconductor devices 3 2000
6,589,886 Method for manufacturing aluminum oxide film for use in a semiconductor device 13 2000
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6,579,755 High dielectric capacitor and method of manufacturing the same 7 2001
7,012,001 Method for manufacturing a semiconductor device for use in a memory cell that includes forming a composite layer of tantalum oxide and titanium oxide over a bottom capacitor electrode 0 2003
 
ASM JAPAN K.K. (4)
7,655,564 Method for forming Ta-Ru liner layer for Cu wiring 8 2007
7,799,674 Ruthenium alloy film for copper interconnects 3 2008
8,084,104 Atomic composition controlled ruthenium alloy film formed by plasma-enhanced atomic layer deposition 0 2008
8,133,555 Method for forming metal film by ALD using beta-diketone metal complex 0 2008
 
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8,017,475 Process to improve high-performance capacitors in integrated MOS technologies 1 2010
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QIMONDA AG (3)
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6,940,111 Radiation protection in integrated circuits 1 2002
6,960,524 Method for production of a metallic or metal-containing layer 0 2003
 
ASM AMERICA, INC. (2)
8,383,525 Plasma-enhanced deposition process for forming a metal oxide thin film and related structures 0 2008
8,329,569 Deposition of ruthenium or ruthenium dioxide 1 2010
 
ASM GENITECH KOREA LTD. (2)
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ROUND ROCK RESEARCH, LLC (2)
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6,881,642 Method of forming a MIM capacitor with metal nitride electrode 13 2003
 
VEECO INSTRUMENTS INC. (2)
7,037,574 Atomic layer deposition for fabricating thin films 49 2001
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Agilent Technologies Texas Instruments Incorporated (1)
6,548,343 Method of fabricating a ferroelectric memory cell 32 2000
 
CELIS SEMICONDUCTOR CORPORATION (1)
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COLOR ACCESS, INC. (1)
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SPANSION LLC (1)
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