Semiconductor metalization barrier
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United States of America Patent
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Nov 7, 2000
Grant Date -
N/A
app pub date -
Mar 30, 1999
filing date -
Mar 30, 1999
priority date (Note) -
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Abstract
A semiconductor metalization barrier, and manufacturing method therefor, is provided which is a stack of a cobalt layer and cobalt tungsten layer deposited on a copper bonding pad.
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