Non-volatile semiconductor memory device
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United States of America Patent
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Nov 14, 2000
Grant Date -
N/A
app pub date -
Jul 29, 1999
filing date -
Jul 30, 1998
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Abstract
A non-volatile semiconductor memory device includes memory cell blocks in which n sectors for erasing are defined where n is an integer equal to or greater than 1. Each of the memory cell blocks includes sense amplifiers, and an activation signal generating circuit activating an activation signal for generating the sense amplifiers. Data held in the sense amplifiers of the memory cell blocks are continuously output in accordance with a burst length. Sectors related to blocks corresponding to the burst length are sequentially subjected to an erase operation.
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