Method of fabricating partially or completely encapsulated top electrode of a ferroelectric capacitor
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United States of America Patent
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Nov 21, 2000
Issued Date -
N/A
app pub date -
Feb 15, 2000
filing date -
Aug 20, 1996
priority date (Note) -
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Abstract
A ferroelectric capacitor includes a bottom electrode, a top electrode, an a ferroelectric layer located between the top and bottom electrodes that extends to completely encapsulate the top electrode, except for a contact hole to allow metalization of the top electrode. The total encapsulation of the top electrode reduces the sensitivity of the ferroelectric capacitor to hydrogen and thus improves electrical switching performance. The encapsulation technique can also be used to improve the performance of ferroelectric transistors and other devices.
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