Plasma deposited fluorinated amorphous carbon films
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United States of America Patent
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Nov 21, 2000
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N/A
app pub date -
May 3, 1999
filing date -
Apr 29, 1998
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Abstract
An interlevel dielectric stack for use in semiconductor devices is provided. The interlevel stack includes a bottom adhesion layer, a middle layer composed of a fluorinated amorphous carbon film, and a top adhesion layer. The bottom and top adhesion layers are composed of a silicon carbide material containing hydrogen. The dielectric stack is subjected to rigorous adhesion and thermal testing. A single continuous process for depositing the dielectric stack in a high density plasma reactor is also provided.
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