Method for cleaning semiconductor wafers containing dielectric films
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United States of America Patent
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Nov 28, 2000
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N/A
app pub date -
Sep 3, 1998
filing date -
Sep 3, 1998
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Expired
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Abstract
A method for cleaning the surface of a semiconductor wafer having an organic dielectric film thereon by removing residual slurry particles adhered to the wafer surface after chemical-mechanical planarization is provided. The semiconductor is subjected to a post CMP cleaning step by applying mechanical frictional force to the surface of the wafer while concurrently applying to the wafer surface and aqueous solution having a pH of greater than 10 for a period of time sufficient to wet and clean the wafer surface, the basic aqueous solution comprised of a surfactant and a tetra alkyl quaternary ammonium hydroxide compound such as tetramethylammonium hydroxide.
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