Method of forming insulating material between components of an integrated circuit
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Dec 5, 2000
Issued Date -
N/A
app pub date -
Mar 16, 1999
filing date -
Oct 9, 1997
priority date (Note) -
In Force
status (Latency Note)
Importance
Abstract
The invention includes a method of forming an insulating material between components of an integrated circuit. A pair of spaced electrical components are provided over a substrate. Polysilicon is chemical vapor deposited over, between, and against the pair of electrical components. Cavities are formed within the polysilicon to enhance porosity of the polysilicon. After the cavities are formed, at least some of the polysilicon is transformed into porous silicon dioxide.
First Claim
Family
International Classification(s)
- [Classification Symbol]
- [Patents Count]
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully