Consistent alignment mark profiles on semiconductor wafers using metal organic chemical vapor deposition titanium nitride protective layer
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United States of America Patent
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Dec 5, 2000
Issued Date -
N/A
app pub date -
Apr 12, 1999
filing date -
Sep 8, 1997
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Abstract
Provided is a method and composition for protecting alignment mark trench walls from attack by CMP slurry accumulating in an alignment mark trench during CMP processing. In a preferred embodiment, a metal organic chemical vapor deposition titanium nitride (MOCVDTiN) layer is deposited over a conventionally applied bulk tungsten layer prior to commencing CMP operations. This MOCVDTiN layer is resistant to CMP slurry attack. As a result, the tungsten trench profile remains a consistent and reliable alignment mark.
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