Process to prepare an array of wires with submicron diameters
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United States of America Patent
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Dec 12, 2000
Grant Date -
N/A
app pub date -
Oct 5, 1998
filing date -
Oct 5, 1998
priority date (Note) -
Expired
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Abstract
A method is disclosed for forming an array of submicron-sized wires in a host body. In the method, the vapor of a metal, such as bismuth, is caused to flow upward through a horizontal refractory plate having many through holes, 200 nanometers or less in diameter, until all foreign material is excluded from the holes and then the plate is cooled from the top side to progressively and simultaneously condense said vapor to form said wires in the holes.
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