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Abstract

A field effect transistor structure which can serve as a low noise amplifier. The field effect transistor has a major surface and source and drain regions extending from the major surface into a body of semiconductor material. A channel region is formed in a portion of the body of semiconductor material separating the source and drain regions. The channel region has a first boundary perpendicular to the major and contiguous with the source region, a second boundary parallel to the first boundary and contiguous with the drain region, a third boundary perpendicular to the first boundary, and a fourth boundary parallel to the channel region. A first portion of the channel region is enclosed by a first border parallel to the first boundary of the channel region, a second border parallel to the second boundary of the channel region, a third boundary of the channel region, and the fourth boundary of the channel region. A non-conductive section is formed in the body of semiconductor material extending from the major surface and enclosed by a first edge coinciding with the first border of the first portion of the channel region, a second edged coinciding with the second border of the first portion of the channel region, a third edge parallel to the third boundary of the channel region, and a fourth edge parallel to the fourth boundary of the channel region. A gate structure is formed above the first portion of the channel region.

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