Method to form a DRAM capacitor using low temperature reoxidation
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United States of America Patent
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Dec 19, 2000
Issued Date -
N/A
app pub date -
Aug 4, 1999
filing date -
Oct 5, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
An embodiment of the present invention teaches a capacitor dielectric in a wafer cluster tool for semiconductor device fabrication formed by a method by the steps of: forming nitride adjacent a layer by rapid thermal nitridation; and subjecting the nitride to an ozone ambient, wherein the ozone ambient is selected from the group consisting of an ambient containing an the presence of ultraviolet light and ozone gas, an ambient containing an ozone gas or an ambient containing an NF.sub.3 /ozone gas mixture.
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