Use of an asymmetric waveform to control ion bombardment during substrate processing
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United States of America Patent
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Dec 19, 2000
Grant Date -
N/A
app pub date -
Jan 11, 2000
filing date -
Dec 1, 1997
priority date (Note) -
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Abstract
A substrate processing system that includes a deposition chamber having a reaction zone, first and second electrodes, a mixed frequency RF power supply including a low frequency RF power source and a high frequency RF power source. The high frequency RF power supply provides enough power to form a plasma from a process gas introduced into the reaction zone and the low frequency RF power supply is configured to supply an asymmetrical waveform to either said first or second electrodes to bias the plasma toward the substrate.
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