Method for growth of crystal surfaces and growth of heteroepitaxial single crystal films thereon
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United States of America Patent
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Dec 26, 2000
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N/A
app pub date -
Dec 16, 1998
filing date -
Jul 3, 1997
priority date (Note) -
Expired
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Abstract
A method of growing atomically-flat surfaces and high quality low-defect crystal films of semiconductor materials and fabricating improved devices thereon. The method is also suitable for growing films heteroepitaxially on substrates that are different than the film. The method is particularly suited for growth of elemental semiconductors (such as Si), compounds of Groups III and V elements of the Periodic Table (such as GaN), and compounds and alloys of Group IV elements of the Periodic Table (such as SiC).
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