System of infrared radiation detection based on sensors of amorphous silicon and its alloys
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United States of America Patent
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Jan 2, 2001
Grant Date -
N/A
app pub date -
Jun 1, 1998
filing date -
Jun 6, 1997
priority date (Note) -
Expired
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Abstract
A system for the detection of infrared light (IR with wavelength .lambda.>800 nm) of high sensitivity. It is based on the measurement of the capacitance in structures made of amorphous silicon, constituted of a junction having two electrodes connecting to outside and susceptible of being built using already-known technologies for the deposition of thin films. The p.sup.+ and n.sup.+ layers (FIG. 1) are made of materials strongly doped with boron and phosphorous atoms. During the fabrication process the temperatures are such as to permit its construction on various substrates. The technologies used make its fabrication possible on large areas and its conformation in two-dimensional matrices of high resolution.
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