Method for manufacturing a semiconductor device
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United States of America Patent
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Jan 9, 2001
Issued Date -
N/A
app pub date -
Oct 20, 1999
filing date -
Jul 27, 1993
priority date (Note) -
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Abstract
A method for forming a silicon island used for forming a TFT or thin film diode comprises the step of pattering a silicon film with a photoresist mask. In order to prevent the contamination of the semiconductor film due to the photoresist material, a protective film such as silicon oxide is interposed between the semiconductor film and the photoresist film. Also, the protective film is preferably formed by thermal annealing or light annealing in an oxidizing atmosphere.
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