Manufacturing method of semiconductor device having high pressure reflow process
Number of patents in Portfolio can not be more than 2000
United States of America Patent
Stats
-
Jan 9, 2001
Grant Date -
N/A
app pub date -
Jan 20, 1998
filing date -
Jul 16, 1997
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
After a copper film is formed so as to cover a wiring connection hole in an interlayer insulating film of a semiconductor device, an oxidation preventive film for preventing oxidation of copper is formed on the copper film while maintaining a high vacuum atmosphere of 1.33.times.10.sup.-3 Pa or less, and copper of the copper film is pressure-introduced into a void of the wiring connection hole by using a high-temperature, high-pressure inert gas. The oxidation preventive film is a silicon nitride film or a metal film such as a titanium film. The copper film is formed by sputtering by using, as a target, copper having purity of 99.999 wt % (5N) or higher. The amount of impurity gases contained in the high-pressure inert gas is set at 50 vpm or less.
First Claim
Family
International Classification(s)
Cited Art Landscape
Patent Citation Ranking
Advertisement
Advertisement
Advertisement
Recipient Email Address
Recipient Email Address
Comment
Recipient Email Address
Add to Portfolio(s)
To add this patent to one, or more, of your portfolios, simply click the add button.
This Patent is in these Portfolios:
Add to additional portfolios:
Last Refreshed On:
Changes done successfully