MOS transistor with shield coplanar with gate electrode
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United States of America Patent
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-
Jan 9, 2001
Grant Date -
N/A
app pub date -
Aug 25, 1998
filing date -
Apr 27, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A MOS transistor including a gate electrode on a gate oxide over a channel region between a source region and a drain region also includes a shield electrode at least partially on the gate oxide adjacent to, self-aligned with, and at least partially coplanar with the gate electrode and between the gate electrode and drain region. Placing the shield electrode on the gate oxide improves the gate-drain shielding, reduces the gate-drain capacitance, Cgd, and reduces hot electron related reliability hazard.
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