Silicon-oxide-nitride-oxide-semiconductor (SONOS) type memory cell and method for retaining data in the same
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United States of America Patent
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Jan 9, 2001
Grant Date -
N/A
app pub date -
Oct 22, 1999
filing date -
Oct 22, 1999
priority date (Note) -
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Abstract
According to one embodiment, a nonvolatile storage circuit (100) can include a volatile portion (102) that includes p-channel metal-oxide-semiconductor (MOS) transistors (106-0 and 106-1) and n-channel MOS (NMOS) transistors (108-0 and 108-1) arranged in a complementary MOS (CMOS) latch configuration. Also included are nonvolatile devices (116-0 and 116-1) disposed between PMOS transistor 106-0 and NMOS transistor 108-0, and between PMOS transistor 106-1 and NMOS transistor 108-1. Nonvolatile devices (116-0 and 116-1) can include silicon-oxide-nitride-semiconductor (SONOS) transistors that can be programmed to opposite states to recall a logic value when power is applied to the nonvolatile storage circuit (100). In a read mode, a bias voltage VBIAS can be applied to nonvolatile devices (116-0 and 116-1) that tends to retain charge in both nonvolatile devices (116-0 and 116-1).
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