Magnetically patterned etch mask
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United States of America Patent
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-
Jan 16, 2001
Grant Date -
N/A
app pub date -
May 14, 1998
filing date -
May 14, 1998
priority date (Note) -
Expired
status (Latency Note)
Importance
Abstract
A method for forming an etch mask is described. In particular, an etch mask is formed using masking particles positionally restrained by a matrix medium. Either the masking particles or the matrix medium is more magnetically conductive with respect to the other. A magnetic field is applied for making a random distribution of the masking particles less random. Consequently, agglomeration of the masking particles is reduced. Masking particles with submicron dimensions may be used for providing features of less than a micron. The mask formed may be an etch mask employed in forming a field emitter tip for a field emission display.
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