Method of producing micro contact structure and contact probe using same
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United States of America Patent
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Jan 16, 2001
Issued Date -
N/A
app pub date -
Mar 29, 2000
filing date -
Nov 22, 1995
priority date (Note) -
Expired
status (Latency Note)
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Abstract
A method of producing a contact structure and a probe card makes it possible to test a semiconductor integrated circuit device formed on a semiconductor wafer having a pin pitch of 0.5 mm or smaller. The contact structure includes a micro contact pin having electric conductivity formed on one end of a beam which is movable in a vertical direction, and a piezoelectric element formed on the beam to drive the beam in the vertical direction. The beam is made of silicon on the surface of which is formed of a conductive thin film, and the micro contact pin has a pyramid shape. The piezoelectric element is a bimorph plate mounted on an upper surface of the beam or both upper and lower surfaces of the beam.
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