Semiconductor processing method of depositing polysilicon
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United States of America Patent
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Jan 16, 2001
Grant Date -
N/A
app pub date -
Jun 3, 1997
filing date -
May 9, 1996
priority date (Note) -
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Abstract
The invention encompasses a semiconductor processing method of depositing polysilicon. A substrate is provided. The substrate comprises a first material and a second material which join at a junction, and which are different from one another. The substrate is exposed to a SiH.sub.4 -comprising source gas to form a nucleation layer consisting of Si. After the exposing, a polysilicon layer is chemical vapor deposited atop the nucleation layer.
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