Charge pump for generating negative voltage without change of threshold due to undesirable back-gate biasing effect
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United States of America Patent
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Jan 16, 2001
Grant Date -
N/A
app pub date -
Mar 12, 1999
filing date -
Mar 16, 1998
priority date (Note) -
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Abstract
A boosting stage of a charge pump circuit has a boosting capacitor connected to a boosted node and an n-channel enhancement type field effect transistor connected between the boosted node and other node and fabricated on a p-type well connected to the other node, and the n-channel enhancement type field effect transistor turns on for discharging current from the other node to the boosted node through the conductive channel and the p-n junction between the p-type well and the n-type source node thereof so that the potential level at the p-type well restricts the back-gate biasing effect, thereby widely swinging the potential level at the other node.
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