Method and apparatus for adaptive process control of critical dimensions during spin coating process
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United States of America Patent
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Jan 23, 2001
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N/A
app pub date -
Dec 10, 1997
filing date -
Dec 10, 1997
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Abstract
A spin coating process for controlling the mean thickness of photoresist on the surface of a semiconductor wafer. The wafer surface has a central axis normal to the surface. The process comprises the steps of applying the solution to the wafer surface and spinning the wafer about the central axis at a spindle speed until the solution has dried. The spindle speed is a function of the desired mean thickness of the photoresist, the barometric pressure and the relative humidity. The spindle speed is determined from a statistical model described by the equation: MT=A+B.times.RH+C.times.BP+D/SS.sup.1/2 wherein: MT is mean thickness in .ANG.; RH is relative humidity in percent; BP is barometric pressure in mm of Hg; SS is spindle speed in rpm; and A, B, C and D are constant coefficients.
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