Two step barrier process
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United States of America Patent
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-
Jan 23, 2001
Grant Date -
N/A
app pub date -
Feb 8, 1999
filing date -
Feb 8, 1999
priority date (Note) -
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status (Latency Note)
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Abstract
A process for forming a tungsten plug structure, in a narrow diameter contact hole, has been developed. The process features the use of a composite layer, comprised on an underlying titanium layer, and an overlying, first titanium nitride barrier layer, on the walls, and at the bottom, of the narrow diameter contact hole. After an RTA procedure, used to create a titanium silicide layer, at the bottom of the narrow diameter contact hole, a second titanium nitride layer is deposited, to fill possible defects in the underlying first titanium nitride, that may have been created during the RTA procedure. The tungsten plug structure is then formed, embedded by dual titanium nitride barrier layers.
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